34 A Insulated Gate Bipolar Transistors (IGBT) 38

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IRG4BC30SPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	34 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	590 ns	1550 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	-55 Cel	20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			40 ns
AUIRG4BC30SSTRL	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	34 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	590 ns	1550 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3			40 ns
IRG4BC30S-STRLP	Infineon Technologies	N-CHANNEL	SINGLE	YES		34 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		1550 ns	2	SMALL OUTLINE				SILICON	600 V	-55 Cel					SINGLE	R-PSSO-G2		COLLECTOR							40 ns
HGTG7N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			17 ns
IKFW40N60DH3EXKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	111 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			50 ns
IXBF20N300	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		3.2 V	THROUGH-HOLE	RECTANGULAR	1		695 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	Tin/Silver/Copper (Sn/Ag/Cu)	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1	NOT SPECIFIED	NOT SPECIFIED	608 ns
IXBH10N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	180 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1		1950 ns	3	FLANGE MOUNT			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				376 ns
MMIX4B20N300	Littelfuse	N-CHANNEL	COMPLEX	YES		34 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	4		695 ns	9	SMALL OUTLINE				SILICON	3000 V						DUAL	R-PDSO-G9		ISOLATED							608 ns
HGTP7N60A4	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17 ns
HGTP7N60A4-F102	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB				17 ns
HGT1S7N60A4S9A	Onsemi	N-CHANNEL	SINGLE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				17 ns
HGT1S7N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
HGTP7N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
HGT1S7N60A4DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
HGTG7N60A4	Onsemi	N-CHANNEL	SINGLE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				17 ns
FS30R06VE3BOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		34 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	6		245 ns	13	FLANGE MOUNT			175 Cel	SILICON	600 V						UPPER	R-XUFM-X13		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	42 ns
FS30R06VE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	88 W	34 A	UNSPECIFIED			2 V	UNSPECIFIED	RECTANGULAR	6		245 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	42 ns
SP001502652	Infineon Technologies	N-Channel			111 W	34 A				2.7 V					184 ns					175 Cel	SILICON	600 V	-40 Cel	20 V		5.7 V					ISOLATED							50 ns
IRG4PC30SPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	34 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	590 ns	1550 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			40 ns
IRGPC30S-E	Infineon Technologies	N-CHANNEL	SINGLE	NO		34 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		2700 ns	3	FLANGE MOUNT				SILICON	600 V					TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	STANDARD SPEED	TO-247AD	e0			61 ns
IRG4BC30S	Infineon Technologies	N-CHANNEL	SINGLE	NO		34 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1550 ns	3	FLANGE MOUNT				SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED	40 ns
IRGBC36	Infineon Technologies	N-CHANNEL	SINGLE	NO		34 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT				SILICON	600 V					MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3			Not Qualified	FAST	TO-220AB	e3
IRG4PC30S	Infineon Technologies	N-CHANNEL	SINGLE	NO		34 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1550 ns	3	FLANGE MOUNT				SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC		NOT SPECIFIED	NOT SPECIFIED	40 ns
AUIRG4BC30S-SL	Infineon Technologies	N-CHANNEL	SINGLE	NO	100 W	34 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	590 ns	1550 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-262AA		NOT SPECIFIED	NOT SPECIFIED	40 ns
IKA15N65ET6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35.3 W	34 A	PLASTIC/EPOXY	POWER CONTROL		1.9 V	THROUGH-HOLE	RECTANGULAR	1		159 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V	-40 Cel	20 V		6.4 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			52 ns
IRGPC30S-EPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO		34 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2700 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V						SINGLE	R-PSFM-T3		COLLECTOR		STANDARD SPEED	TO-247AD		NOT SPECIFIED	NOT SPECIFIED	61 ns
AUIRG4BC30SSTRR	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	34 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	590 ns	1550 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	40 ns
AUIRG4BC30S-S	Infineon Technologies	N-CHANNEL	SINGLE	YES	100 W	34 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	590 ns	1550 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V		20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	40 ns
IRG4PC30S-E	Infineon Technologies	N-CHANNEL	SINGLE	NO		34 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		1550 ns	3	FLANGE MOUNT				SILICON	600 V					MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			40 ns
IKFW40N60DH3E	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	111 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		184 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	-40 Cel	20 V		5.7 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			50 ns
IXDH20N120AU1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	200 W	34 A	PLASTIC/EPOXY	MOTOR CONTROL	90 ns		THROUGH-HOLE	RECTANGULAR	1	100 ns	450 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3	10	260	120 ns
IXBA10N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	180 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	GULL WING	RECTANGULAR	1		1950 ns	2	SMALL OUTLINE			150 Cel	SILICON	3000 V	-55 Cel	20 V		5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	10	260	376 ns
IXDA20N120AS	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	34 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		450 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V		6.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	HIGH SPEED	TO-263AB	e3	10	260	120 ns
IXGM17N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	METAL	POWER CONTROL		3.5 V	PIN/PEG	ROUND	1		1900 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGM17N100A	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	METAL	POWER CONTROL		4 V	PIN/PEG	ROUND	1		1450 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V		5 V		BOTTOM	O-MBFM-P2		COLLECTOR	Not Qualified	HIGH SPEED	TO-204AE		NOT SPECIFIED	NOT SPECIFIED	300 ns
IXGH17N100U1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		1900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3	10	260	300 ns
IXGH17N100	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		1900 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			300 ns
IXGH17N100A	Littelfuse	N-CHANNEL	SINGLE	NO	150 W	34 A	PLASTIC/EPOXY	POWER CONTROL		4 V	THROUGH-HOLE	RECTANGULAR	1		1450 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 W	150 Cel	SILICON	1000 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-247AD	e3			300 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.