375 A Insulated Gate Bipolar Transistors (IGBT) 18

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FF300R17ME4BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1520 ns

11

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

405 ns

BSM300GB60DLC

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1250 W

375 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

2

402 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

176 ns

FS300R17KE4BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

6

1520 ns

29

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

405 ns

BSM300GB60DLCHOSA1

Infineon Technologies

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

NO

375 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

2

402 ns

7

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

176 ns

BSM300GB60DLCE3256HDLA1

Infineon Technologies

N-Channel

1250 W

375 A

402 ns

125 Cel

SILICON

600 V

-40 Cel

20 V

ISOLATED

176 ns

FS300R17KE4

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1800 W

375 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

6

1520 ns

29

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

405 ns

FS300R17KE3BOSA1

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

1300 ns

29

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

384 ns

FS300R17KE3

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1650 W

375 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

6

1300 ns

29

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X29

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

384 ns

FF300R17ME4B11BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1520 ns

11

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

405 ns

UL RECOGNIZED

FF300R17ME3ENG

Infineon Technologies

N-Channel

1650 W

375 A

2.45 V

1300 ns

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

ISOLATED

384 ns

FF300R17ME4PBPSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1520 ns

11

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

405 ns

FF300R17ME3

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1650 W

375 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

384 ns

FF300R17ME3BOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1300 ns

11

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X11

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

384 ns

FF300R17ME4

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

1800 W

375 A

UNSPECIFIED

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

2

1520 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

405 ns

FF300R17ME4_B11

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

1520 ns

11

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X11

NOT SPECIFIED

NOT SPECIFIED

405 ns

MG17300WB-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

375 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1300 ns

11

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

385 ns

UL RECOGNIZED

IXYK110N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

375 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

78 ns

IXYX110N120A4

Littelfuse

N-CHANNEL

SINGLE

NO

1360 W

375 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

850 ns

3

IN-LINE

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-247AD

78 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.