380 A Insulated Gate Bipolar Transistors (IGBT) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXXX200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	380 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1	395 ns	3	IN-LINE	175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3	COLLECTOR			e3			140 ns
SKM300GB12F4	Semikron International	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		380 A	UNSPECIFIED	POWER CONTROL	2.42 V	UNSPECIFIED	RECTANGULAR	2	463 ns	7	FLANGE MOUNT	175 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X7	ISOLATED						145 ns	UL RECOGNIZED
IXXK200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	1630 W	380 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	THROUGH-HOLE	RECTANGULAR	1	395 ns	3	FLANGE MOUNT	175 Cel	SILICON	600 V	-55 Cel	20 V	6 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR		TO-264AA	e1	10	260	140 ns
FS380R12A6T4B	Infineon Technologies	N-CHANNEL	3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR	NO	870 W	380 A	UNSPECIFIED	POWER CONTROL	1.95 V	UNSPECIFIED	RECTANGULAR	6	820 ns	33	FLANGE MOUNT	150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V		UPPER	R-XUFM-X33	ISOLATED				NOT SPECIFIED	NOT SPECIFIED	190 ns
IXYN140N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	1070 W	380 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	UNSPECIFIED	RECTANGULAR	1	1240 ns	4	FLANGE MOUNT	175 Cel	SILICON	1200 V	-55 Cel	20 V	6.5 V		UPPER	R-PUFM-X4	ISOLATED	LOW CONDUCTION LOSS					86 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.