5 A Insulated Gate Bipolar Transistors (IGBT) 31

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXBT2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE		150 Cel	SILICON	2500 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		LOW CONDUCTION LOSS	TO-268AA	e3	10	260	310 ns
OM6508SAT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1			3	FLANGE MOUNT			SILICON	500 V				TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			187 ns
BUP200	Infineon Technologies	N-CHANNEL		NO	50 W	5 A			200 ns					300 ns				Insulated Gate BIP Transistors	150 Cel		1200 V		20 V	6.5 V	Tin/Lead (Sn/Pb)								e0
OM6508SA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V			4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			187 ns
OM6501STT	Infineon Technologies	N-CHANNEL	SINGLE	NO		5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1			3	FLANGE MOUNT			SILICON	500 V				TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-257AA	e0			187 ns
BSM05GD100D	Infineon Technologies				30 W	5 A				2.8 V			1					Insulated Gate BIP Transistors			1000 V
OM6508SAV	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1			3	FLANGE MOUNT			SILICON	500 V				TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			187 ns
BSM05GD100DN1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	6			17	FLANGE MOUNT			SILICON	1000 V					UPPER	R-PUFM-T17			Not Qualified
OM6508CSA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	35 W	5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1		1160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V			4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			187 ns
OM6501ST	Infineon Technologies	N-CHANNEL	SINGLE	NO	35 W	5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V			4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-257AA	e0			187 ns
OM6501STV	Infineon Technologies	N-CHANNEL	SINGLE	NO		5 A	METAL	POWER CONTROL			PIN/PEG	SQUARE	1			3	FLANGE MOUNT			SILICON	500 V				TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-257AA	e0			187 ns
IKD03N60RF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		265 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3			18 ns
IKD03N60RFA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	5 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	GULL WING	RECTANGULAR	1		265 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252				18 ns	AEC-Q101
IKD03N60RFATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		265 ns	2	SMALL OUTLINE			SILICON	600 V				TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-252	e3			18 ns
IKD03N60RFBTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		265 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5.7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-252		NOT SPECIFIED	NOT SPECIFIED	18 ns
IKD03N60RFAATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		265 ns	2	SMALL OUTLINE			SILICON	600 V	-40 Cel				SINGLE	R-PSSO-G2		COLLECTOR			TO-252		NOT SPECIFIED	NOT SPECIFIED	18 ns	AEC-Q101
GT5G103(SM)	Toshiba	N-CHANNEL		YES	20 W	5 A												Insulated Gate BIP Transistors	150 Cel		400 V		6 V
GT5J311(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT5J301	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28 W	5 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	300 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT5G103	Toshiba	N-CHANNEL		NO	1.3 W	5 A												Insulated Gate BIP Transistors	150 Cel		400 V		6 V
GT5G101	Toshiba	N-CHANNEL	SINGLE	NO		5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2000 ns	3	IN-LINE		150 Cel	SILICON	400 V				TIN LEAD	SINGLE	R-PSIP-T3			Not Qualified			e0			900 ns
GT5G102(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2000 ns	2	SMALL OUTLINE		150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified						900 ns
GT5J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	45 W	5 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT5G131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		1800 ns	8	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	400 V		6 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G8			Not Qualified			e0			1400 ns
GT5G103(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2400 ns	3	IN-LINE		150 Cel	SILICON	400 V					SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					1100 ns
GT5G102(2-7B5C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		5 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		2000 ns	3	IN-LINE		150 Cel	SILICON	400 V					SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified						900 ns
GT5G102(SM)	Toshiba	N-CHANNEL		YES	20 W	5 A												Insulated Gate BIP Transistors	150 Cel		400 V		20 V
GT5G102	Toshiba	N-CHANNEL		NO	20 W	5 A												Insulated Gate BIP Transistors	150 Cel		400 V		20 V
GT5G103(2-7B6C)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		5 A	PLASTIC/EPOXY				GULL WING	RECTANGULAR	1		2400 ns	2	SMALL OUTLINE		150 Cel	SILICON	400 V					SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	LOW SATURATION VOLTAGE					1100 ns
MIG5Q805H	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE	NO		5 A	UNSPECIFIED	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	6		600 ns	20	IN-LINE		150 Cel	SILICON	1200 V					DUAL	R-XDIP-T20		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	150 ns
IXBH2N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	32 W	5 A	PLASTIC/EPOXY	POWER CONTROL		3.8 V	THROUGH-HOLE	RECTANGULAR	1		252 ns	3	FLANGE MOUNT		150 Cel	SILICON	2500 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247	e3	10	260	310 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.