56 A Insulated Gate Bipolar Transistors (IGBT) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
RGS60TS65DHRC11	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	223 W	56 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1		290 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	30 V		7 V	TIN	SINGLE	R-PSFM-T3					TO-247	e3			46 ns	AEC-Q101
IXGR40N60C2D1	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		56 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		210 ns	3	IN-LINE		150 Cel	SILICON	600 V					TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e1			38 ns
IXGR48N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	56 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		187 ns	3	IN-LINE		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	45 ns	UL RECOGNIZED
IXYR50N120C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	56 A	PLASTIC/EPOXY	POWER CONTROL	3.5 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED				e1	10	260	96 ns
IXGH56N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	56 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1	165 ns	250 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	500 ns	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-247AD	e3	10	260	67 ns
IXGH28N30A	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGT28N30B	Littelfuse	N-CHANNEL	SINGLE	YES	150 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		90 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns
IXGH28N30B	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1		90 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGH28N30BS	Littelfuse	N-CHANNEL	SINGLE	YES	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		90 ns	2	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-G2		COLLECTOR	Not Qualified	FAST		e3	10	260	15 ns
IXGH28N30	Littelfuse	N-CHANNEL	SINGLE	NO	200 W	56 A	PLASTIC/EPOXY	MOTOR CONTROL		THROUGH-HOLE	RECTANGULAR	1	600 ns	250 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	300 V		20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	FAST	TO-247AD	e3	10	260	15 ns
IXGT28N30A	Littelfuse	N-CHANNEL	SINGLE	YES		56 A	PLASTIC/EPOXY	MOTOR CONTROL		GULL WING	RECTANGULAR	1		150 ns	2	SMALL OUTLINE		150 Cel	SILICON	300 V					MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-268AA	e3	10	260	15 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.