62 A Insulated Gate Bipolar Transistors (IGBT) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IKW30N65ES5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		62 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		204 ns	3	FLANGE MOUNT			SILICON	650 V		-40 Cel				TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			30 ns
IKB30N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	188 W	62 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	GULL WING	RECTANGULAR	1		204 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3			30 ns
AUIRGP65G40D0	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	62 A	PLASTIC/EPOXY	POWER CONTROL	29 ns	2.2 V	THROUGH-HOLE	RECTANGULAR	1	32 ns	157 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	82 ns	-55 Cel	20 V	195 ns	5.5 V		SINGLE	R-PSFM-T3					TO-247AC		NOT SPECIFIED	NOT SPECIFIED	47 ns	AEC-Q101
IKW30N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	62 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		204 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			30 ns
AUIRGF65G40D0	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	62 A	PLASTIC/EPOXY	POWER CONTROL	29 ns	2.2 V	THROUGH-HOLE	RECTANGULAR	1	32 ns	157 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	82 ns	-55 Cel	20 V	195 ns	5.5 V		SINGLE	R-PSFM-T3					TO-247AD		NOT SPECIFIED	NOT SPECIFIED	47 ns	AEC-Q101
MUBW40-12T7	Littelfuse	N-CHANNEL	COMPLEX	NO	220 W	62 A	UNSPECIFIED	MOTOR CONTROL		2.6 V	UNSPECIFIED	RECTANGULAR	7		610 ns	20	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X20		ISOLATED	Not Qualified			e3			140 ns	UL RECOGNIZED
IXDH55N120D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		62 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	1			4	FLANGE MOUNT			SILICON	1200 V						MATTE TIN	UPPER	R-XUFM-X4			Not Qualified			e3	10	260
MWI35-12A7	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	280 W	62 A	UNSPECIFIED	POWER CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	6		570 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			MATTE TIN OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e3			180 ns	UL RECOGNIZED
MWI35-12A7T	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO		62 A	UNSPECIFIED	MOTOR CONTROL			UNSPECIFIED	RECTANGULAR	6		570 ns	19	FLANGE MOUNT			SILICON	1200 V						MATTE TIN OVER NICKEL	UPPER	R-XUFM-X19		ISOLATED	Not Qualified	ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE		e3			180 ns
IXXH30N65C4D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230 W	62 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	THROUGH-HOLE	RECTANGULAR	1		161 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				65 ns
IXBX28N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	350 W	62 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		3785 ns	3	IN-LINE		150 Cel	SILICON	3000 V		-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					462 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.