72 A Insulated Gate Bipolar Transistors (IGBT) 20

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MWI50-06A7

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

225 W

72 A

UNSPECIFIED

POWER CONTROL

2.4 V

PIN/PEG

RECTANGULAR

6

330 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P11

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

BSM50GD120DN2BOSA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

72 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

100 ns

MWI50-06A7T

Littelfuse

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

225 W

72 A

UNSPECIFIED

POWER CONTROL

2.4 V

PIN/PEG

RECTANGULAR

6

330 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

MATTE TIN OVER NICKEL

UPPER

R-XUFM-P13

ISOLATED

Not Qualified

ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE

e3

110 ns

STGWA40H65DFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

158 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

34 ns

HGTG27N120BN

Onsemi

N-CHANNEL

SINGLE

NO

72 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS, AVALANCHE RATED

TO-247

e3

42 ns

HGT5A27N120BN

Onsemi

N-CHANNEL

SINGLE

NO

500 W

72 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

4.2 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

360 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

53 ns

-55 Cel

20 V

480 ns

SINGLE

R-PSFM-T3

COLLECTOR

AVALANCHE RATED

TO-247

42 ns

STGWA40H65DHFB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

183 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

24.6 ns

STGWA40HP65FB2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

BSM50GB170DN2

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

500 W

72 A

UNSPECIFIED

POWER CONTROL

3.9 V

UNSPECIFIED

RECTANGULAR

2

740 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

500 ns

BSM50GB170DN2HOSA1

Infineon Technologies

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

72 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

740 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

500 ns

BSM50GD120DN2

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

72 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

6

450 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC81T120R2CX1SA2

Infineon Technologies

N-CHANNEL

SINGLE

YES

72 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

450 ns

UNCASED CHIP

150 Cel

SILICON

1200 V

UPPER

R-XUUC-N

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

100 ns

SIGC81T120R2CX1SA1

Infineon Technologies

N-CHANNEL

SINGLE

YES

72 A

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

450 ns

UNCASED CHIP

SILICON

1200 V

UPPER

R-XUUC-N

INTEGRATED GATE RESISTOR

100 ns

SIGC81T120R2C

Infineon Technologies

N-CHANNEL

SINGLE

YES

72 A

UNSPECIFIED

POWER CONTROL

100 ns

NO LEAD

RECTANGULAR

1

100 ns

450 ns

UNCASED CHIP

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

UPPER

R-XUUC-N

Not Qualified

INTEGRATED GATE RESISTOR

NOT SPECIFIED

NOT SPECIFIED

100 ns

MG50Q6ES51A

Toshiba

NO

350 W

72 A

UNSPECIFIED

3.2 V

PIN/PEG

RECTANGULAR

1

12

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

1200 V

20 V

UPPER

R-XUFM-P12

Not Qualified

MG50Q6ES51

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

72 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MG50Q6ES50

Toshiba

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

350 W

72 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

RECTANGULAR

6

600 ns

17

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

150 ns

MKI50-06A7

Littelfuse

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

225 W

72 A

UNSPECIFIED

MOTOR CONTROL

2.4 V

UNSPECIFIED

RECTANGULAR

4

330 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

110 ns

ITF48IF1200HR

Littelfuse

N-CHANNEL

SINGLE

NO

390 W

72 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

SINGLE

R-PSFM-T3

ISOLATED

52 ns

UL RECOGNIZED

MKI50-06A7T

Littelfuse

225 W

72 A

2.4 V

1

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.