78 A Insulated Gate Bipolar Transistors (IGBT) 19

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IRG4PSH71KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	190 ns	660 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-274AA	e3			152 ns
IRG7PH42UD1-EP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	78 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	43 ns	460 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			30 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3
IRG7PH42UD1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	313 W	78 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	43 ns	460 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			30 V		6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3
IXGN72N60C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	360 W	78 A	PLASTIC/EPOXY	POWER CONTROL		2.5 V	UNSPECIFIED	RECTANGULAR	1	110 ns	132 ns	4	FLANGE MOUNT			150 Cel	SILICON	600 V		-55 Cel	20 V	240 ns	5.5 V		UPPER	R-PUFM-X4		ISOLATED							64 ns	UL RECOGNIZED
BSM50GD120DN2G	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	POWER CONTROL		3.7 V	THROUGH-HOLE	RECTANGULAR	6		450 ns	39	FLANGE MOUNT	Insulated Gate BIP Transistors		125 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-T39		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
BSM50GB120DN2HOSA1	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO		78 A	UNSPECIFIED				UNSPECIFIED	RECTANGULAR	2		450 ns	7	FLANGE MOUNT			150 Cel	SILICON	1200 V							UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
BSM50GB120DN2	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED			3.2 V	UNSPECIFIED	RECTANGULAR	2		450 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
BSM50GD120DN2GBOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		78 A	UNSPECIFIED	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	6		450 ns	39	FLANGE MOUNT				SILICON	1200 V							UPPER	R-XUFM-T39		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	100 ns
SP001546084	Infineon Technologies	N-CHANNEL	SINGLE	NO	370 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL	39 ns		THROUGH-HOLE	RECTANGULAR	1	40 ns	216 ns	3	FLANGE MOUNT			175 Cel	SILICON	600 V	99 ns	-55 Cel	20 V	240 ns	5.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				74 ns
AUIRGS30B60KTRR	Infineon Technologies	N-CHANNEL	SINGLE	YES	370 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL	39 ns		GULL WING	RECTANGULAR	1	42 ns	237 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			74 ns
IRG4PSH71KD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		78 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		660 ns	3	IN-LINE				SILICON	1200 V							SINGLE	R-PSIP-T3			Not Qualified	LOW CONDUCTION LOSS			NOT SPECIFIED	NOT SPECIFIED	152 ns
AUIRGSL30B60K	Infineon Technologies	N-CHANNEL	SINGLE	NO	370 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL	39 ns		THROUGH-HOLE	RECTANGULAR	1	42 ns	237 ns	3	IN-LINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.5 V		SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA				74 ns
AUIRGS30B60KTRL	Infineon Technologies	N-CHANNEL	SINGLE	YES	370 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL	39 ns		GULL WING	RECTANGULAR	1	42 ns	237 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			74 ns
AUIRGS30B60K	Infineon Technologies	N-CHANNEL	SINGLE	YES	370 W	78 A	PLASTIC/EPOXY	MOTOR CONTROL	39 ns		GULL WING	RECTANGULAR	1	42 ns	237 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	74 ns
MG50Q1ZS50	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	1		600 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified						200 ns
MG50Q2YS50A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED					50 ns
MG50Q2YS50	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	400 W	78 A	UNSPECIFIED	MOTOR CONTROL		3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	400 W	150 Cel	SILICON	1200 V			20 V		6 V		UPPER	R-XUFM-X7		ISOLATED	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	200 ns
IXA45IF1200HB	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	325 W	78 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT			125 Cel	SILICON	1200 V		-40 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
MMIX1Y82N120C3H1	Littelfuse	N-CHANNEL		YES	320 W	78 A												Insulated Gate BIP Transistors		150 Cel		1200 V			20 V		5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.