94 A Insulated Gate Bipolar Transistors (IGBT) 2

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Part	RoHS	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Emitter Current	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Fall Time (tf)	Maximum Drain Current (Abs) (ID)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Minimum Intrinsic Stand-off Ratio	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Intrinsic Stand-off Ratio	Minimum Static Inter-Base Resistance	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
APT35GN120L2DQ2G		Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	379 W	94 A	PLASTIC/EPOXY	POWER CONTROL				THROUGH-HOLE	RECTANGULAR		1			465 ns	3	IN-LINE	Insulated Gate BIP Transistors			150 Cel	SILICON	1200 V			30 V		6.5 V	TIN SILVER COPPER			SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified			HIGH RELIABILITY		e1			46 ns
IXYH30N120C4		Littelfuse	N-CHANNEL	SINGLE	NO	500 W	94 A	PLASTIC/EPOXY	POWER CONTROL			2.4 V	THROUGH-HOLE	RECTANGULAR		1			360 ns	3	FLANGE MOUNT				175 Cel	SILICON	1200 V		-55 Cel	20 V		6.5 V				SINGLE	R-PSFM-T3		COLLECTOR					TO-247AD				56 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.