95 A Insulated Gate Bipolar Transistors (IGBT) 21

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXYH25N250CHV	Littelfuse	N-CHANNEL	SINGLE	NO	937 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1	575 ns	3	FLANGE MOUNT		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247				51 ns
IXGN50N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4.2 V	UNSPECIFIED	RECTANGULAR	1	485 ns	4	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		UPPER	R-PUFM-X4		ISOLATED							60 ns	UL RECOGNIZED
IXYT25N250CHV	Littelfuse	N-CHANNEL	SINGLE	YES	937 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4 V	GULL WING	RECTANGULAR	1	775 ns	2	SMALL OUTLINE		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-268AA				51 ns
IXYX40N450HV	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	95 A	PLASTIC/EPOXY	POWER CONTROL	3.9 V	THROUGH-HOLE	RECTANGULAR	1	1128 ns	3	IN-LINE		150 Cel	SILICON	4500 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR							786 ns
IXYX25N250CV1HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	937 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1	575 ns	3	IN-LINE		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-247				51 ns
FS75R07W2E3B11ABOMA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		95 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	6	258 ns	18	FLANGE MOUNT			SILICON	650 V					UPPER	R-XUFM-X18	1	ISOLATED							44 ns
IXGX50N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4.2 V	THROUGH-HOLE	RECTANGULAR	1	485 ns	3	IN-LINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					60 ns
IXYX25N250CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	937 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4 V	THROUGH-HOLE	RECTANGULAR	1	575 ns	3	IN-LINE		175 Cel	SILICON	2500 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR							51 ns
FP75R06KE3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	250 W	95 A	UNSPECIFIED		1.9 V	UNSPECIFIED	RECTANGULAR	7	760 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
FP75R06KE3BOSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO		95 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	7	760 ns	24	FLANGE MOUNT		175 Cel	SILICON	600 V					UPPER	R-XUFM-X24		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
F3L75R07W2E3-B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	250 W	95 A	UNSPECIFIED	POWER CONTROL	1.9 V	UNSPECIFIED	RECTANGULAR	4	370 ns	14	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	650 V		20 V			UPPER	R-XUFM-X14		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	49 ns
F3L200R07W2S5F_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO		95 A	UNSPECIFIED	POWER CONTROL	1.38 V	UNSPECIFIED	RECTANGULAR	4	683 ns	14	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	4.75 V		UPPER	R-XUFM-X14		ISOLATED							143 ns	IEC-61140; UL RECOGNIZED
BSM75GD60DLC	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	330 W	95 A	UNSPECIFIED		2.45 V	UNSPECIFIED	RECTANGULAR	6	205 ns	17	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V			UPPER	R-XUFM-X17		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	90 ns
BSM75GD60DLCBOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO		95 A	UNSPECIFIED			UNSPECIFIED	RECTANGULAR	6	205 ns	17	FLANGE MOUNT		150 Cel	SILICON	600 V					UPPER	R-XUFM-X17		ISOLATED	Not Qualified						90 ns
FS75R07W2E3_B11A	Infineon Technologies	N-CHANNEL	COMPLEX	NO		95 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	6	258 ns	18	FLANGE MOUNT			SILICON	650 V					UPPER	R-XUFM-X18	1	ISOLATED							44 ns
IRGP6660D-EPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	95 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1	220 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD		NOT SPECIFIED	NOT SPECIFIED	100 ns
IRGP6660DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	330 W	95 A	PLASTIC/EPOXY	POWER CONTROL	1.95 V	THROUGH-HOLE	RECTANGULAR	1	220 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-40 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AC		NOT SPECIFIED	NOT SPECIFIED	100 ns
FS75R06KL4	Infineon Technologies				340 W	95 A			2.55 V			1				Insulated Gate BIP Transistors	125 Cel		600 V		20 V
VUB116-16NO1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR	NO	380 W	95 A	UNSPECIFIED	POWER CONTROL	3.5 V	UNSPECIFIED	RECTANGULAR	1		11	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V		GOLD OVER NICKEL	UPPER	R-XUFM-X11		ISOLATED	Not Qualified			e4				UL RECOGNIZED
VUI30-12N1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		95 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1	570 ns	6	FLANGE MOUNT		150 Cel	SILICON	1200 V					UPPER	R-XUFM-X6		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
IXGK50N120C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	460 W	95 A	PLASTIC/EPOXY	POWER CONTROL	4.2 V	THROUGH-HOLE	RECTANGULAR	1	485 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	60 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.