96 A Insulated Gate Bipolar Transistors (IGBT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4063DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

96 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

THROUGH-HOLE

RECTANGULAR

1

46 ns

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

100 ns

IRGP4068D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

96 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

180 ns

IRGP4068DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

96 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

180 ns

AUIRGP4063D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

96 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

THROUGH-HOLE

RECTANGULAR

1

46 ns

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

100 ns

AUIRGP4063D-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

96 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

THROUGH-HOLE

RECTANGULAR

1

46 ns

210 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

100 ns

APT35GP120B2DQ2G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

543 W

96 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e1

36 ns

IRGP4063D-EPBF

Infineon Technologies

N-CHANNEL

NO

330 W

96 A

56 ns

46 ns

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

NOT SPECIFIED

NOT SPECIFIED

IXGQ96N30PCD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

96 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

266 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

PURE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

139 ns

IXGP36N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

220 W

96 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-220AB

43 ns

IXGA36N60A3

Littelfuse

N-CHANNEL

SINGLE

YES

220 W

96 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

GULL WING

RECTANGULAR

1

1000 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

10

260

43 ns

IXGH36N60A3

Littelfuse

N-CHANNEL

SINGLE

NO

220 W

96 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

43 ns

IXGH36N60A3D4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

96 A

PLASTIC/EPOXY

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

43 ns

IXYH40N120B3

Littelfuse

N-CHANNEL

SINGLE

NO

577 W

96 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

84 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.