105 W Insulated Gate Bipolar Transistors (IGBT) 22

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IKB15N65EH5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	180 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			34 ns
FP10R12W1T4_B3	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	105 W	20 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	6	500 ns	21	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X21		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	108 ns
STGD3NC120H-1	STMicroelectronics	N-CHANNEL	SINGLE	NO	105 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.8 V	THROUGH-HOLE	RECTANGULAR	1	342 ns	3	IN-LINE		150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3		COLLECTOR		TO-251		NOT SPECIFIED	NOT SPECIFIED	18.5 ns
IKP15N65F5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	195 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB	e3			26 ns
AIKB15N65DF5	Infineon Technologies	N-Channel			105 W	30 A			2.1 V				174 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V											28 ns
AIGB15N65F5	Infineon Technologies	N-Channel			105 W	30 A			2.1 V				174 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V											28 ns
AIKB15N65DH5	Infineon Technologies	N-Channel			105 W	30 A			2.1 V				201 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V											27 ns
IGB15N65S5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE	YES	105 W	35 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1	187 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			27 ns
IGB15N65S5	Infineon Technologies	N-CHANNEL	SINGLE	YES	105 W	35 A	PLASTIC/EPOXY	POWER CONTROL	1.7 V	GULL WING	RECTANGULAR	1	187 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			27 ns
AIGB15N65H5	Infineon Technologies	N-Channel			105 W	30 A			2.1 V				201 ns				175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V											27 ns
IKP15N65F5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	195 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB	e3			26 ns
IKP15N65H5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB	e3			24 ns
IKP15N65H5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	196 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB	e3			24 ns
SP000707708	Infineon Technologies	N-Channel			105 W	20 A			2.25 V				500 ns				150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V					ISOLATED						108 ns
SP000973410	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	166 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3		COLLECTOR		TO-220AB				24 ns
FP10R12W1T4_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	105 W	20 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	7	500 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23	1	ISOLATED	Not Qualified				260	108 ns
IKB15N65EH5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	30 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	GULL WING	RECTANGULAR	1	180 ns	2	SMALL OUTLINE		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR		TO-263AB	e3			34 ns
FP15R12KT3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	105 W	25 A	UNSPECIFIED		2.15 V	UNSPECIFIED	RECTANGULAR	7	610 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X24		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	140 ns
FP15R12W1T3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	105 W	25 A	UNSPECIFIED		2.1 V	UNSPECIFIED	RECTANGULAR	7	590 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	80 ns
FP10R12W1T4	Infineon Technologies	N-CHANNEL	COMPLEX	NO	105 W	20 A	UNSPECIFIED	POWER CONTROL	2.25 V	UNSPECIFIED	RECTANGULAR	7	500 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	108 ns
FP15R12NT3	Infineon Technologies	N-CHANNEL	COMPLEX	NO	105 W	25 A	UNSPECIFIED		2.15 V	UNSPECIFIED	RECTANGULAR	7	650 ns	23	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X23		ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	85 ns
IXYJ20N120C3D1	Littelfuse	N-CHANNEL		NO	105 W	21 A										Insulated Gate BIP Transistors	150 Cel		1200 V		20 V	5 V

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.