138 W Insulated Gate Bipolar Transistors (IGBT) 7

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IHP10T120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	138 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		769 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			69 ns
SGB15N60	Infineon Technologies	N-CHANNEL	SINGLE	YES	138 W	31 A	PLASTIC/EPOXY	POWER CONTROL	40 ns		GULL WING	RECTANGULAR	1	55 ns	315 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB			245	54 ns
SGP15N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	138 W	31 A	PLASTIC/EPOXY	POWER CONTROL	40 ns		THROUGH-HOLE	RECTANGULAR	1	55 ns	315 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	54 ns
SKB15N60HS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	138 W	27 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB			245	27 ns
SGW15N60	Infineon Technologies	N-CHANNEL	SINGLE	NO	138 W	31 A	PLASTIC/EPOXY	POWER CONTROL	40 ns		THROUGH-HOLE	RECTANGULAR	1	55 ns	315 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			54 ns
SGB15N60HS	Infineon Technologies	N-CHANNEL	SINGLE	YES	138 W	27 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		252 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB			245	27 ns
IKFW60N65ES5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	138 W	77 A	PLASTIC/EPOXY	POWER CONTROL		1.7 V	THROUGH-HOLE	RECTANGULAR	1		161 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V	TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-247	e3			47 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.