208 W Insulated Gate Bipolar Transistors (IGBT) 22

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
HGTG30N60C3D_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	63 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	275 ns	550 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS	TO-247		NOT SPECIFIED	NOT SPECIFIED	85 ns
FGB20N60SFD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL	21 ns		GULL WING	RECTANGULAR	1	43 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	28 ns	AEC-Q101
HGTG30N60B3	Onsemi	N-CHANNEL	SINGLE	NO	208 W	60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	150 ns	365 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			56 ns
AOK30B60D1	Alpha & Omega Semiconductor	N-CHANNEL		NO	208 W	60 A												Insulated Gate BIP Transistors	150 Cel		600 V			20 V
AFGB20N60SFD-BW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	40 A	PLASTIC/EPOXY	SWITCHING	21 ns	2.85 V	GULL WING	RECTANGULAR	1	43 ns	123 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	37 ns	-55 Cel	20 V	169 ns	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	28 ns	AEC-Q101
FGB20N60SF	Onsemi	N-CHANNEL	SINGLE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	48 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	28 ns
FGB20N60SFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	40 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	48 ns	123 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-263AB	e3	30	260	28 ns
A2C50S65M2-F	STMicroelectronics	N-CHANNEL	COMPLEX	NO	208 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	7		298 ns	35	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	167 ns
A1P50S65M2	STMicroelectronics	N-CHANNEL	COMPLEX	NO	208 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		331 ns	22	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X22		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	167.2 ns
A1P50S65M2-F	STMicroelectronics	N-CHANNEL	COMPLEX	NO	208 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	6		331 ns	22	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X22		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	167.2 ns
A2C50S65M2	STMicroelectronics	N-CHANNEL	COMPLEX	NO	208 W	50 A	UNSPECIFIED	POWER CONTROL		2.3 V	UNSPECIFIED	RECTANGULAR	7		298 ns	35	FLANGE MOUNT		150 Cel	SILICON	650 V		-40 Cel	20 V		7 V		UPPER	R-XUFM-X35		ISOLATED					NOT SPECIFIED	NOT SPECIFIED	167 ns
STGWA19NC60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	52 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		272 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.75 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247		NOT SPECIFIED	NOT SPECIFIED	32 ns
IRGS15B60KPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	208 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL	22 ns		GULL WING	RECTANGULAR	1	36 ns	231 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3	30	260	52 ns
IRGS15B60KTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	208 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL	22 ns		GULL WING	RECTANGULAR	1	36 ns	231 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3			52 ns
IRGS15B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns		GULL WING	RECTANGULAR	1	36 ns	231 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	ULTRA FAST		e3	30	260	52 ns
IRGSL15B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns		THROUGH-HOLE	RECTANGULAR	1	36 ns	231 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.5 V	Matte Tin (Sn) - with Nickel (Ni) barrier	SINGLE	R-PSIP-T3	1	COLLECTOR	Not Qualified	ULTRA FAST	TO-262	e3	40	260	52 ns
IRGS15B60KTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	208 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL	22 ns		GULL WING	RECTANGULAR	1	36 ns	231 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.5 V	MATTE TIN OVER NICKEL	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified			e3			52 ns
IRGB15B60KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL	25 ns		THROUGH-HOLE	RECTANGULAR	1	36 ns	231 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		5.5 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRA FAST	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	52 ns
VID75-06P1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO	208 W	69 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	1		330 ns	13	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V				UPPER	R-XUFM-X13		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	105 ns
VID50-12P1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND THERMISTOR	NO	208 W	49 A	UNSPECIFIED	POWER CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	1		570 ns	10	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V				UPPER	R-XUFM-X10		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns
VII50-12P1	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	208 W	49 A	UNSPECIFIED	POWER CONTROL		3.7 V	UNSPECIFIED	RECTANGULAR	2		570 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V			GOLD OVER NICKEL	UPPER	R-XUFM-X12		ISOLATED	Not Qualified			e4			170 ns
VII75-06P1	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	208 W	69 A	UNSPECIFIED	MOTOR CONTROL		2.8 V	UNSPECIFIED	RECTANGULAR	2		330 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V			GOLD OVER NICKEL	UPPER	R-XUFM-X12		ISOLATED	Not Qualified			e4			105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.