223 W Insulated Gate Bipolar Transistors (IGBT) 9

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RGS60TS65DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223 W

56 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

290 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

46 ns

AEC-Q101

NGTB50N60FLWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

FGA90N33ATTU

Onsemi

N-CHANNEL

SINGLE

NO

223 W

330 A

UNSPECIFIED

POWER CONTROL

1.4 V

THROUGH-HOLE

RECTANGULAR

1

240 ns

280 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

5.5 V

SINGLE

R-XSFM-T3

NOT SPECIFIED

NOT SPECIFIED

63 ns

NGTG50N60FLWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

NGTB50N60FWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

TIN

e3

RBN25H125S1FPQ-A0#CB0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.34 V

THROUGH-HOLE

RECTANGULAR

1

167 ns

3

FLANGE MOUNT

175 Cel

SILICON

1250 V

30 V

7.1 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

27 ns

IXGA42N30C3

Littelfuse

N-CHANNEL

SINGLE

YES

223 W

250 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

120 ns

229 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

43 ns

IXGP42N30C3

Littelfuse

N-CHANNEL

SINGLE

NO

223 W

250 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

229 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

43 ns

IXGH42N30C3

Littelfuse

N-CHANNEL

SINGLE

NO

223 W

250 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

229 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

300 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

43 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.