231 W Insulated Gate Bipolar Transistors (IGBT) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Nominal Turn On Time (ton)	Reference Standard
FPF1C2P5MF07AM	Onsemi	N-CHANNEL	COMPLEX	NO	231 W	39 A	UNSPECIFIED	POWER CONTROL	1.6 V	UNSPECIFIED	RECTANGULAR	2		24	FLANGE MOUNT	150 Cel	SILICON	620 V	-40 Cel	20 V	7 V		UPPER	R-XUFM-X24						UL APPROVED
FGA40T65UQDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.67 V	THROUGH-HOLE	RECTANGULAR	1	314 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		RC-IGBT		e3	52 ns
FGHL40S65UQ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING	1.7 V	THROUGH-HOLE	RECTANGULAR	1	340 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR		TO-247	e3	58 ns
FGH40T65UQDF_F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.67 V	THROUGH-HOLE	RECTANGULAR	1	314 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		RC-IGBT	TO-247	e3	52 ns
FGH40T65UQDF-F155	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	80 A	PLASTIC/EPOXY	POWER CONTROL	1.67 V	THROUGH-HOLE	RECTANGULAR	1	314 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3			TO-247AB	e3	52 ns
IHW25N120E1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	231 W	50 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	1677 ns	3	FLANGE MOUNT	150 Cel	SILICON	1200 V	-40 Cel	20 V	8 V	TIN	SINGLE	R-PSFM-T3			TO-247	e3

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.