290 W Insulated Gate Bipolar Transistors (IGBT) 27

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FGH40N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	110 ns
IXA60IF1200NA	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	88 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	1		350 ns	4	FLANGE MOUNT		125 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		UPPER	R-PUFM-X4	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747; UL RECOGNIZED
FGH40N60SFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	90 ns	170 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3			108 ns
FGH40N60SFDTU-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	54 ns	192 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247AB	e3			60 ns	AEC-Q101
FGH40N60SFDTU_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1	54 ns	192 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR		RC-IGBT	TO-247AB	e3			60 ns	AEC-Q101
IXYF40N450	Littelfuse	N-CHANNEL	SINGLE	NO	290 W	60 A	PLASTIC/EPOXY	POWER CONTROL		3.9 V	THROUGH-HOLE	RECTANGULAR	1		1128 ns	3	IN-LINE		150 Cel	SILICON	4500 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	ISOLATED							786 ns
FGH80N60FD2TU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	201 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED	74 ns
FGH40N60UFTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	190 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3			110 ns
FGH40N60SFTU	Onsemi	N-CHANNEL	SINGLE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	54 ns	150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AB	e3			67 ns
MIXA60W1200TED	Littelfuse	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	290 W	85 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		350 ns	28	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X28	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
FGH40N65UFDTU-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1	60 ns	152 ns	3	FLANGE MOUNT		150 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247	e3			58 ns	AEC-Q101
FGH40N65UFDTU_F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1	60 ns	203 ns	3	FLANGE MOUNT		150 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR			TO-247AB	e3			60 ns	AEC-Q101
FGH40N65UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1	60 ns	152 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247	e3			58 ns
FGH80N60FDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	100 ns	201 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified		TO-247AB	e3			74 ns
IXBF50N360	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	70 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		1880 ns	3	IN-LINE		150 Cel	SILICON	3600 V	-55 Cel	20 V	5 V		SINGLE	R-PSIP-T3	ISOLATED							889 ns
FGH80N60FD2	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		201 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	7 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247AB				74 ns
FGH40N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	80 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247AB		NOT SPECIFIED	NOT SPECIFIED	69 ns
HGTG20N60A4	Onsemi	N-CHANNEL	SINGLE	NO	290 W	70 A	PLASTIC/EPOXY	POWER CONTROL	18 ns		THROUGH-HOLE	RECTANGULAR	1	73 ns	160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	7 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247	e3			28 ns
IKWH70N65WR6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	122 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		404 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-40 Cel	20 V	4.8 V		SINGLE	R-PSFM-T3				TO-247				73 ns
RJH1CV6DPK-00#T0	Renesas Electronics	N-CHANNEL		NO	290 W	60 A												Insulated Gate BIP Transistors	150 Cel		1200 V		30 V										NOT SPECIFIED	NOT SPECIFIED
MUBW50-17T8	Littelfuse	N-CHANNEL	COMPLEX	NO	290 W	74 A	UNSPECIFIED	POWER CONTROL		2.4 V	UNSPECIFIED	RECTANGULAR	7		980 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1700 V		20 V		MATTE TIN OVER NICKEL	UPPER	R-XUFM-X24	ISOLATED	Not Qualified			e3			300 ns	UL RECOGNIZED
IXA55I1200HJ	Littelfuse	N-CHANNEL	SINGLE	NO	290 W	84 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	IN-LINE		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3	ISOLATED					NOT SPECIFIED	NOT SPECIFIED	110 ns	IEC-60747
IXBH22N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1		2025 ns	3	FLANGE MOUNT		150 Cel	SILICON	3000 V	-55 Cel	20 V	5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-247				406 ns
IXYR50N120C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	56 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3	ISOLATED				e1	10	260	96 ns
IXBT22N300HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	290 W	60 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1		2025 ns	2	SMALL OUTLINE		150 Cel	SILICON	3000 V	-55 Cel	20 V	5 V		SINGLE	R-PSSO-G2	COLLECTOR			TO-268AA				406 ns
MIXA60WB1200TEH	Littelfuse	N-CHANNEL	COMPLEX	NO	290 W	85 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	7		350 ns	24	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X24	ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns	UL RECOGNIZED
MIXA61H1200ED	Littelfuse	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	290 W	85 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	4		350 ns	12	FLANGE MOUNT	Insulated Gate BIP Transistors	125 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X12	ISOLATED							110 ns	UL RECOGNIZED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.