42 W Insulated Gate Bipolar Transistors (IGBT) 18

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IRG4PC30KPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		380 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V		MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			54 ns
IRG4PH30KPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	170 ns	640 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			53 ns
IRG4BC30KPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	170 ns	380 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	54 ns
FGPF10N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	20 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	24.8 ns	89.3 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	8.5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			15.4 ns
FGPF15N60UNDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	12.8 ns	69.8 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	8.5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			18.8 ns
SGD02N120	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns		GULL WING	RECTANGULAR	1	61 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSSO-G2	3	COLLECTOR	Not Qualified		TO-252AA	e3		260	40 ns
IKP04N60T	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	8 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		207 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5.7 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SWITCHING SPEED	TO-220AB	e3			21 ns
OM6502ST	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	10 A	METAL	POWER CONTROL	1000 ns		PIN/PEG	SQUARE	1	1500 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V			4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-257AA	e0			150 ns
IGU04N60T	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	9.5 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		268 ns	3	IN-LINE		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V	TIN	SINGLE	R-PSIP-T3		COLLECTOR			TO-251	e3			24 ns
OM6509SA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	10 A	METAL	POWER CONTROL	1000 ns		PIN/PEG	SQUARE	1	1500 ns	700 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V			4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			150 ns
OM6509CSA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	10 A	METAL	POWER CONTROL	1000 ns		PIN/PEG	SQUARE	1	1500 ns		3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V			4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0
IKI04N60T	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	8 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		207 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5.7 V		SINGLE	R-PSIP-T3			Not Qualified		TO-262AA			260	21 ns
SGI02N120	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns		THROUGH-HOLE	RECTANGULAR	1	61 ns	375 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V		SINGLE	R-PSIP-T3	NOT APPLICABLE	COLLECTOR	Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED	40 ns
SKP02N120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	12 ns		THROUGH-HOLE	RECTANGULAR	1	96 ns	375 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			40 ns
SGB02N120	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns		GULL WING	RECTANGULAR	1	61 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V		SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB			245	40 ns
SKB02N120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	12 ns		GULL WING	RECTANGULAR	1	96 ns	375 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3			40 ns
IRG4PC30KDPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	28 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	120 ns	370 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V	6 V	MATTE TIN OVER NICKEL	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-247AC	e3			100 ns
SGP02N120	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W	6.2 A	PLASTIC/EPOXY	POWER CONTROL	24 ns		THROUGH-HOLE	RECTANGULAR	1	61 ns	375 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e3			40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.