53.6 W Insulated Gate Bipolar Transistors (IGBT) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
AIHD03N60RF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	6.5 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1	265 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252				18 ns	AEC-Q101
AIHD03N60RFATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	6.5 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1	265 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252				18 ns	AEC-Q101
IKD03N60RF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	5 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	265 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5.7 V	TIN	SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252	e3			18 ns
IKD03N60RFA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	5 A	PLASTIC/EPOXY	POWER CONTROL	2.5 V	GULL WING	RECTANGULAR	1	265 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	-40 Cel	20 V	5.7 V		SINGLE	R-PSSO-G2	1	COLLECTOR	TO-252				18 ns	AEC-Q101
IKD03N60RFBTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	53.6 W	5 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1	265 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	5.7 V		SINGLE	R-PSSO-G2		COLLECTOR	TO-252		NOT SPECIFIED	NOT SPECIFIED	18 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.