660 W Insulated Gate Bipolar Transistors (IGBT) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXDN75N120	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	150 A	UNSPECIFIED	MOTOR CONTROL	2.7 V	UNSPECIFIED	RECTANGULAR	1		700 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V			NICKEL	UPPER	R-XUFM-X4	ISOLATED	Not Qualified					150 ns	UL RECOGNIZED
IXYX40N450HV	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	95 A	PLASTIC/EPOXY	POWER CONTROL	3.9 V	THROUGH-HOLE	RECTANGULAR	1		1128 ns	3	IN-LINE			150 Cel	SILICON	4500 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR						786 ns
IXBX50N360HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	660 W	125 A	PLASTIC/EPOXY	POWER CONTROL	2.9 V	THROUGH-HOLE	RECTANGULAR	1		1880 ns	3	IN-LINE			150 Cel	SILICON	3600 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3	COLLECTOR		LOW CONDUCTION LOSS	TO-247			889 ns
F4-100R12KS4	Infineon Technologies	N-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	660 W	130 A	UNSPECIFIED		3.75 V	UNSPECIFIED	RECTANGULAR	4		390 ns	26	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X26	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	190 ns
FS100R12KS4	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	130 A	UNSPECIFIED		3.7 V	UNSPECIFIED	RECTANGULAR	6		390 ns	39	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X39	ISOLATED	Not Qualified			NOT SPECIFIED	NOT SPECIFIED	190 ns
MG100Q2YS50A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	MOTOR CONTROL	3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	660 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				50 ns
MG100Q1ZS50	Toshiba			NO	660 W	150 A	UNSPECIFIED		3.6 V	UNSPECIFIED	RECTANGULAR	1			5	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V				UPPER	R-XUFM-X5		Not Qualified
MG100Q2YS51	Toshiba	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	POWER CONTROL	3.6 V	UNSPECIFIED	RECTANGULAR	2		600 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7	ISOLATED	Not Qualified					200 ns
MG100Q2YS51A	Toshiba	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	660 W	150 A	UNSPECIFIED	MOTOR CONTROL	3.6 V	UNSPECIFIED	RECTANGULAR	2	300 ns	500 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	660 W	150 Cel	SILICON	1200 V		20 V		6 V		UPPER	R-XUFM-X7	ISOLATED	Not Qualified	HIGH SPEED				50 ns
MG100Q2YS50	Toshiba			NO	660 W	150 A	UNSPECIFIED		3.6 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel		1200 V		20 V				UPPER	R-XUFM-X7		Not Qualified
IXGX120N60B	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	200 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	280 ns	360 ns	3	IN-LINE			150 Cel	SILICON	600 V	-55 Cel	20 V	640 ns	5.5 V		SINGLE	R-PSIP-T3	COLLECTOR						105 ns
IXGK120N60B	Littelfuse	N-CHANNEL	SINGLE	NO	660 W	200 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	280 ns	360 ns	3	FLANGE MOUNT			150 Cel	SILICON	600 V	-55 Cel	20 V	640 ns	5.5 V		SINGLE	R-PSFM-T3	COLLECTOR			TO-264AA			105 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.