72 W Insulated Gate Bipolar Transistors (IGBT) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
NGTB10N60R2DT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	72 W	20 A	PLASTIC/EPOXY	GENERAL PURPOSE	2.3 V	GULL WING	RECTANGULAR	1	220 ns	2	SMALL OUTLINE		175 Cel	SILICON	600 V	20 V	7 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR				e3	30	260	188 ns
OM6503SC	Infineon Technologies	N-CHANNEL	SINGLE	NO	72 W	20 A	METAL	POWER CONTROL		PIN/PEG	RECTANGULAR	1		3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		4 V	TIN LEAD	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-258AA	e0			300 ns
OM6505SA	Infineon Technologies	N-CHANNEL	SINGLE	NO	72 W	15 A	METAL	POWER CONTROL		PIN/PEG	SQUARE	1		3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			300 ns
OM6505CSA	Infineon Technologies	N-CHANNEL	SINGLE	NO	72 W	15 A	METAL	POWER CONTROL		PIN/PEG	SQUARE	1	1150 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	500 V		4 V	TIN LEAD	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	LOW CONDUCTION LOSS	TO-254AA	e0			300 ns
MP6757	Toshiba	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	72 W	25 A	PLASTIC/EPOXY	MOTOR CONTROL	3.1 V	THROUGH-HOLE	RECTANGULAR	6	400 ns	11	FLANGE MOUNT	Insulated Gate BIP Transistors		SILICON	600 V	20 V		Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T11		ISOLATED	Not Qualified			e0			600 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.