750 W Insulated Gate Bipolar Transistors (IGBT) 26

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
FS150R12KT4BOSA1	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	750 W	150 A	UNSPECIFIED			2.1 V	UNSPECIFIED	RECTANGULAR	6		605 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X35		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	165 ns
IXXN110N65C4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	210 A	PLASTIC/EPOXY	POWER CONTROL		2.35 V	UNSPECIFIED	RECTANGULAR	1		160 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		UPPER	R-PUFM-X4		ISOLATED							71 ns	UL RECOGNIZED
FS400R07A1E3_H5	Infineon Technologies	N-CHANNEL	COMPLEX	NO	750 W	500 A	UNSPECIFIED	POWER CONTROL		1.9 V	UNSPECIFIED	RECTANGULAR	6		580 ns	25	FLANGE MOUNT		150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V		UPPER	R-XUFM-X25	1	ISOLATED							200 ns
FS150R12KT4_B11	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	750 W	150 A	UNSPECIFIED			2.2 V	UNSPECIFIED	RECTANGULAR	6		605 ns	35	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X35		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	165 ns
FS150R12KT4P_B11	Infineon Technologies	N-Channel			750 W					2.1 V					605 ns				150 Cel	SILICON	1200 V	-40 Cel	20 V	6.4 V					ISOLATED							165 ns
IXXH75N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		185 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	105 ns
IXXH75N60C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		185 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	105 ns
FGY75N60SMD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	150 A	PLASTIC/EPOXY	POWER CONTROL	73 ns		THROUGH-HOLE	RECTANGULAR	1	29 ns	161 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	6.5 V	MATTE TIN	SINGLE	R-PSIP-T3			Not Qualified	LOW CONDUCTION LOSS		e3			76 ns
STGYA75H120DF2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1		406 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR				e3			95 ns
IXXN110N65B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	230 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	1		250 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		UPPER	R-PUFM-X4		ISOLATED							65 ns	UL RECOGNIZED
IXYH60N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	140 A	PLASTIC/EPOXY	POWER CONTROL		2.9 V	THROUGH-HOLE	RECTANGULAR	1		268 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	104 ns
IXXH75N60B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	108 ns
IXYH75N65C3H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	170 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		166 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	83 ns
FGY100T65SCDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	200 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.9 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	25 V	6.9 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		FAST SWITCHING	TO-247	e3			240 ns
IFS150B12N3E4P_B11	Infineon Technologies	N-CHANNEL	COMPLEX	NO	750 W	220 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		640 ns	41	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.35 V		UPPER	R-XUFM-X41		ISOLATED							240 ns	UL RECOGNIZED
IFS150B12N3T4_B31	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR	NO	750 W	150 A	UNSPECIFIED	POWER CONTROL		2.2 V	UNSPECIFIED	RECTANGULAR	6		605 ns	41	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X41		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	165 ns	UL RECOGNIZED
IFS150B12N3E4_B31	Infineon Technologies	N-CHANNEL	COMPLEX	NO	750 W	150 A	UNSPECIFIED	POWER CONTROL		2.15 V	UNSPECIFIED	RECTANGULAR	6		640 ns	34	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X34			Not Qualified				NOT SPECIFIED	NOT SPECIFIED	240 ns
FS150R12KT4_B9	Infineon Technologies	N-CHANNEL	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	NO	750 W	150 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		525 ns	33	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V			UPPER	R-XUFM-X33	1	ISOLATED	Not Qualified					260	196 ns
IFS150B12N3E4PB11BPSA1	Infineon Technologies	N-CHANNEL	COMPLEX	NO	750 W	220 A	UNSPECIFIED	POWER CONTROL		2.1 V	UNSPECIFIED	RECTANGULAR	6		640 ns	41	FLANGE MOUNT		150 Cel	SILICON	1200 V	-40 Cel	20 V	6.35 V		UPPER	R-XUFM-X41		ISOLATED							240 ns	UL RECOGNIZED
AUIRGPS4067D1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	195 A	PLASTIC/EPOXY	POWER CONTROL	82 ns		THROUGH-HOLE	RECTANGULAR	1	48 ns	281 ns	3	IN-LINE	Insulated Gate BIP Transistors	175 Cel	SILICON	600 V		20 V	6.5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-274AA		NOT SPECIFIED	NOT SPECIFIED	127 ns
FS400R07A1E3H5BPSA1	Infineon Technologies	N-Channel			750 W	500 A				1.9 V					580 ns				150 Cel	SILICON	650 V	-40 Cel	20 V	6.5 V					ISOLATED							200 ns
IRGPS46160DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1		285 ns	3	IN-LINE		175 Cel	SILICON	600 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3		COLLECTOR			TO-274AA		NOT SPECIFIED	NOT SPECIFIED	155 ns
IXYH75N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	175 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		179 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD				90 ns
IXYH50N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	100 A	PLASTIC/EPOXY	POWER CONTROL		3.5 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V	5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	96 ns
IXYH75N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	175 A	PLASTIC/EPOXY	POWER CONTROL		2.3 V	THROUGH-HOLE	RECTANGULAR	1		179 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V	6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	90 ns
IXXH75N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	750 W	160 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		315 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V	5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	108 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.