880 W Insulated Gate Bipolar Transistors (IGBT) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXXX110N65B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	3	IN-LINE	175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	Matte Tin (Sn)	SINGLE	R-PSIP-T3	COLLECTOR		e3			65 ns
IKQ75N120CS6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	150 A	PLASTIC/EPOXY	POWER CONTROL	2.15 V	THROUGH-HOLE	RECTANGULAR	1	428 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN	SINGLE	R-PSFM-T3		TO-247	e3			76 ns
IKY75N120CS6XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	150 A	PLASTIC/EPOXY	POWER CONTROL	2.15 V	THROUGH-HOLE	RECTANGULAR	1	331 ns	4	IN-LINE	175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN	SINGLE	R-PSIP-T4			e3			64 ns
IXXH110N65C4	Littelfuse	N-CHANNEL	SINGLE	NO	880 W	235 A	PLASTIC/EPOXY	POWER CONTROL	2.35 V	THROUGH-HOLE	RECTANGULAR	1	160 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	MATTE TIN	SINGLE	R-PSFM-T3	COLLECTOR	TO-247AD	e3	10	260	71 ns
IXXK110N65B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3	COLLECTOR	TO-264AA	e1	10	260	65 ns
IKY75N120CS6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	150 A	PLASTIC/EPOXY	POWER CONTROL	2.15 V	THROUGH-HOLE	RECTANGULAR	1	331 ns	4	IN-LINE	175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN	SINGLE	R-PSIP-T4			e3			64 ns
IKQ75N120CS6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	150 A	PLASTIC/EPOXY	POWER CONTROL	2.15 V	THROUGH-HOLE	RECTANGULAR	1	428 ns	3	FLANGE MOUNT	175 Cel	SILICON	1200 V	-40 Cel	20 V	6.3 V	TIN	SINGLE	R-PSFM-T3		TO-247	e3			76 ns
IXYN50N170CV1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	120 A	PLASTIC/EPOXY	POWER CONTROL	3.7 V	UNSPECIFIED	RECTANGULAR	1	396 ns	4	FLANGE MOUNT	175 Cel	SILICON	1700 V	-55 Cel	20 V	5 V		UPPER	R-PUFM-X4	ISOLATED					62 ns	UL RECOGNIZED
IXXK100N75B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	426 ns	3	FLANGE MOUNT	175 Cel	SILICON	750 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR	TO-264AA				67 ns
IXXH110N65B4	Littelfuse	N-CHANNEL	SINGLE	NO	880 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	3	FLANGE MOUNT	175 Cel	SILICON	650 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSFM-T3	COLLECTOR	TO-247AD				65 ns
IXXX100N75B4H1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	880 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.1 V	THROUGH-HOLE	RECTANGULAR	1	426 ns	3	IN-LINE	175 Cel	SILICON	750 V	-55 Cel	20 V	6.5 V		SINGLE	R-PSIP-T3	COLLECTOR					67 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.