ROHM Insulated Gate Bipolar Transistors (IGBT) 26

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RGTVX6TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

144 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

298 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

RGTV60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

201 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

45 ns

RGC80TSX8RGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

535 W

80 A

PLASTIC/EPOXY

POWER CONTROL

5 V

THROUGH-HOLE

RECTANGULAR

1

725 ns

3

FLANGE MOUNT

175 Cel

SILICON

1800 V

-40 Cel

30 V

7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

120 ns

RGS80TSX2DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

629 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

89 ns

AEC-Q101

RGW80TS65CHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

81 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

185 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

SINGLE

R-PSFM-T3

TO-247

54 ns

AEC-Q101

RGS50TSX2DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

AEC-Q101

RGS60TS65DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223 W

56 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

290 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

46 ns

AEC-Q101

RGT8BM65DTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

158 ns

2

SMALL OUTLINE

SILICON

650 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

e3

54 ns

RGS50TSX2DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

RGT16BM65DTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

e3

27 ns

RGTH60TK65GC11

ROHM

N-CHANNEL

SINGLE

NO

28 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

179 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

67 ns

RGTH60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

58 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

179 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

67 ns

RGS30TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

267 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

AEC-Q101

RGS80TSX2HRC11

ROHM

N-CHANNEL

SINGLE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

629 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

89 ns

AEC-Q101

RGTH40TS65GC11

ROHM

N-CHANNEL

SINGLE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

141 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

47 ns

RGW60TK65GVC11

ROHM

N-CHANNEL

SINGLE

NO

33 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

209 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

50 ns

RGS30TSX2DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

189 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

39 ns

RGS80TS65DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

73 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

62 ns

AEC-Q101

RGS80TSX2DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

555 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

89 ns

RGSX5TS65DHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

404 W

114 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

SINGLE

R-PSFM-T3

TO-247

83 ns

AEC-Q101

RGT16NS65DGTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

SILICON

650 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

e3

27 ns

RGT50NS65DGTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

210 ns

2

SMALL OUTLINE

SILICON

650 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

e3

65 ns

RGT50TM65DGC9

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

21 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

65 ns

RGT60TS65DGC13

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

194 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

SINGLE

R-PSFM-T3

TO-247

69 ns

RGTH40TK65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

141 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

47 ns

RGTH40TS65GC13

ROHM

N-CHANNEL

SINGLE

NO

144 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

141 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

TO-247

47 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.