Samsung Insulated Gate Bipolar Transistors (IGBT) 34

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Gate-Emitter Voltage	Maximum Gate-Emitter Threshold Voltage	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	Nominal Turn On Time (ton)
SGH13N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		13 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING		41 ns
SGP6N60UF	Samsung	N-CHANNEL	SINGLE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1	280 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	37 ns
SGW6N60UF	Samsung	N-CHANNEL	SINGLE	YES		6 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		120 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		37 ns
SGR5N60RUF	Samsung	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		27 ns
SGL30N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		48 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	44 ns
SGH30N60RUF	Samsung	N-CHANNEL	SINGLE	NO		48 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		160 ns	3	FLANGE MOUNT			SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING		44 ns
SGR15N40L	Samsung	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY		GULL WING	RECTANGULAR	1		2800 ns	2	SMALL OUTLINE		150 Cel	SILICON	450 V			SINGLE	R-PSSO-G2		Not Qualified			1200 ns
SGR2N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		2.4 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		132 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		46 ns
SGW6N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1	280 ns	120 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V	SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		37 ns
SGP5N60RUF	Samsung	N-CHANNEL	SINGLE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	27 ns
SGL60N90DG3	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL	THROUGH-HOLE	RECTANGULAR	1		450 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	320 ns
SGP40N60UF	Samsung	N-CHANNEL	SINGLE	NO	160 W	40 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1	280 ns	118 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	32 ns
SGL20N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	40 ns
SGI25N40	Samsung	N-CHANNEL	SINGLE	NO		25 A	PLASTIC/EPOXY		THROUGH-HOLE	RECTANGULAR	1		13000 ns	3	IN-LINE		150 Cel	SILICON	400 V			SINGLE	R-PSIP-T3		Not Qualified			1000 ns
SGP5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	27 ns
SGU20N40L	Samsung	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY		THROUGH-HOLE	RECTANGULAR	1		2800 ns	3	IN-LINE		150 Cel	SILICON	450 V			SINGLE	R-PSIP-T3		Not Qualified			1200 ns
SGL40N150D	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL	THROUGH-HOLE	RECTANGULAR	1		680 ns	3	FLANGE MOUNT		150 Cel	SILICON	1500 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	1300 ns
SGP6N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1	280 ns	120 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	37 ns
SGL60N90D	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL	THROUGH-HOLE	RECTANGULAR	1		500 ns	3	FLANGE MOUNT		150 Cel	SILICON	900 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	350 ns
SGL40N150	Samsung	N-CHANNEL	SINGLE	NO		40 A	PLASTIC/EPOXY	POWER CONTROL	THROUGH-HOLE	RECTANGULAR	1		500 ns	3	FLANGE MOUNT		150 Cel	SILICON	1500 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-264	700 ns
SGR20N40L	Samsung	N-CHANNEL	SINGLE	YES			PLASTIC/EPOXY		GULL WING	RECTANGULAR	1		2800 ns	2	SMALL OUTLINE		150 Cel	SILICON	450 V			SINGLE	R-PSSO-G2		Not Qualified			1200 ns
SGU15N40L	Samsung	N-CHANNEL	SINGLE	NO			PLASTIC/EPOXY		THROUGH-HOLE	RECTANGULAR	1		2800 ns	3	IN-LINE		150 Cel	SILICON	450 V			SINGLE	R-PSIP-T3		Not Qualified			1200 ns
SGP15N60RUF	Samsung	N-CHANNEL	SINGLE	NO		24 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	90 ns
SGW5N60RUF	Samsung	N-CHANNEL	SINGLE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		27 ns
SGP10N60RUF	Samsung	N-CHANNEL	SINGLE	NO		16 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		162 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	27 ns
SGW13N60UF	Samsung	N-CHANNEL	SINGLE	YES		13 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		160 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		41 ns
SGW13N60UFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1	280 ns	160 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V	SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		41 ns
SGW5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		8 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		186 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		27 ns
SGP13N60UF	Samsung	N-CHANNEL	SINGLE	NO	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1	280 ns	160 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	20 V	7.5 V	SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	41 ns
SGL15N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		24 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	90 ns
SGW23N60UF	Samsung	N-CHANNEL	SINGLE	YES		23 A	PLASTIC/EPOXY	MOTOR CONTROL	GULL WING	RECTANGULAR	1		155 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V			SINGLE	R-PSSO-G2		Not Qualified	HIGH SPEED SWITCHING		32 ns
SGL10N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		16 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		162 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	27 ns
SGL5N60RUFD	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		8 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		186 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3	ISOLATED	Not Qualified	HIGH SPEED SWITCHING	TO-264	27 ns
SGP20N60RUF	Samsung	N-CHANNEL	SINGLE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL	THROUGH-HOLE	RECTANGULAR	1		149 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V			SINGLE	R-PSFM-T3		Not Qualified	HIGH SPEED SWITCHING	TO-220	40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.