SINGLE Other Function Transistors 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SD882Q

Secos

NPN

SINGLE

NO

.75 W

3 A

1

Other Transistors

100

150 Cel

BCP69-16/DG,115

NXP Semiconductors

PNP

SINGLE

YES

40 MHz

1.35 W

2 A

1

Other Transistors

100

150 Cel

MJ802

Texas Instruments

NPN

SINGLE

NO

2 MHz

200 W

30 A

1

Other Transistors

25

200 Cel

MRF10005

TE Connectivity

NPN

SINGLE

25 W

.00125 A

1

Other Transistors

20

200 Cel

2N2369A

Texas Instruments

NPN

SINGLE

NO

500 MHz

.36 W

.2 A

1

Other Transistors

40

200 Cel

BSP316P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

.68 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.68 A

1

235

5HP01C-TB-H

Onsemi

P-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.07 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.07 A

1

e6

152-10

Semitronics

NPN

SINGLE

NO

.5 MHz

100 W

6 A

1

Other Transistors

18

140 Cel

2SC1815-Y(T)

Toshiba

NPN

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

120

125 Cel

PBSS2515MB,315

NXP Semiconductors

NPN

SINGLE

YES

250 MHz

.59 W

.5 A

1

Other Transistors

90

150 Cel

TIN

1

e3

30

260

PMV160UP,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.48 W

ENHANCEMENT MODE

1

1.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1.2 A

1

e3

30

260

2N5681

Texas Instruments

NPN

SINGLE

NO

30 MHz

1 W

1 A

1

Other Transistors

40

200 Cel

BC338-40

Texas Instruments

NPN

SINGLE

NO

.625 W

.8 A

1

Other Transistors

250

150 Cel

BC54-16PA,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

1.65 W

1 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PBSS5630PA,115

NXP Semiconductors

PNP

SINGLE

YES

50 MHz

2.1 W

6 A

1

Other Transistors

110

150 Cel

TIN

1

e3

30

260

PMV50UPE,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

3.57 W

ENHANCEMENT MODE

1

3.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

3.2 A

1

e3

30

260

PMXB350UPEZ

NXP Semiconductors

P-CHANNEL

SINGLE

YES

5.68 W

ENHANCEMENT MODE

1

1.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

BD243B

Texas Instruments

NPN

SINGLE

NO

65 W

8 A

1

Other Transistors

30

150 Cel

PBSS4041PZ,115

NXP Semiconductors

PNP

SINGLE

YES

2.6 W

5.7 A

1

Other Transistors

120

150 Cel

TIN

1

e3

30

260

PBSS5160QAZ

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

85

150 Cel

PBSS9410PA,115

NXP Semiconductors

PNP

SINGLE

YES

70 MHz

2.1 W

2.7 A

1

Other Transistors

15

150 Cel

TIN

1

e3

30

260

PMV33UPE,215

NXP Semiconductors

P-CHANNEL

SINGLE

YES

4.15 W

ENHANCEMENT MODE

1

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4.4 A

1

e3

30

260

SI2301DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

SI2301DS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.3 A

1

e3

260

SI4835BDY

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

7.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.4 A

2SC2547E

Renesas Electronics

NPN

SINGLE

NO

90 MHz

.4 W

.1 A

1

Other Transistors

400

125 Cel

BC337-25-BULK

Vishay Intertechnology

NPN

SINGLE

NO

.625 W

.8 A

1

Other Transistors

160

150 Cel

Tin/Lead (Sn/Pb)

e0

BC807-16

Vishay Intertechnology

PNP

SINGLE

YES

.35 W

1.2 A

1

Other Transistors

100

150 Cel

Matte Tin (Sn)

e3

BFG425W,135

NXP Semiconductors

NPN

SINGLE

YES

.135 W

.03 A

1

Other Transistors

50

150 Cel

TIN

1

e3

260

IRFR9024TR

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

42 W

ENHANCEMENT MODE

1

8.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.8 A

IRLML5103

Infineon Technologies

P-CHANNEL

SINGLE

YES

.28 W

ENHANCEMENT MODE

1

.54 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.54 A

1

MJ4238

Motorola

PNP

SINGLE

NO

20 MHz

90 W

8 A

1

Other Transistors

20

150 Cel

Tin/Lead (Sn/Pb)

e0

PH1214-300M

TE Connectivity

NPN

SINGLE

620 W

1

Other Transistors

200 Cel

PMPB47XP,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

1.7 W

ENHANCEMENT MODE

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4 A

1

e3

30

260

AUIRFR9024NTRR

Infineon Technologies

P-CHANNEL

SINGLE

YES

38 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

MRF454A

Motorola

NPN

SINGLE

NO

250 W

20 A

1

Other Transistors

10

150 Cel

Tin/Lead (Sn/Pb)

e0

PBSS5260QAZ

NXP Semiconductors

PNP

SINGLE

YES

100 MHz

1 W

1.7 A

1

Other Transistors

30

150 Cel

SFT1305-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

1

e6

163-06

Semitronics

NPN

SINGLE

NO

.5 MHz

200 W

20 A

1

Other Transistors

15

175 Cel

BCW68G

Vishay Intertechnology

PNP

SINGLE

YES

.33 W

.8 A

1

Other Transistors

50

150 Cel

Matte Tin (Sn)

e3

BFS17A

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

175 Cel

Matte Tin (Sn)

e3

BFS17A,235

NXP Semiconductors

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

175 Cel

TIN

1

e3

30

260

MMBT2222A-G

Weitron Technology

NPN

SINGLE

YES

300 MHz

.3 W

.6 A

1

Other Transistors

40

150 Cel

MMBT4401-G

Weitron Technology

NPN

SINGLE

YES

250 MHz

.3 W

.6 A

1

Other Transistors

20

150 Cel

PBSS4041PX,115

NXP Semiconductors

PNP

SINGLE

YES

2.5 W

5 A

1

Other Transistors

80

150 Cel

TIN

1

e3

30

260

2SA1095

Toshiba

PNP

SINGLE

NO

60 MHz

150 W

15 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

CMPTA96TRPBFREE

Central Semiconductor

PNP

SINGLE

YES

20 MHz

.35 W

.5 A

1

Other Transistors

50

150 Cel

MATTE TIN

1

e3

30

260

PH1214-110M

TE Connectivity

NPN

SINGLE

NO

300 W

10 A

1

Other Transistors

200 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.