.01 A Other Function Transistors 51

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Moisture Sensitivity Level (MSL)	JESD-609 Code	Peak Reflow Temperature (C)
2S307	Texas Instruments	PNP	SINGLE	NO	2 MHz	.05 W	.01 A	1	Other Transistors		175 Cel
2N1401	Texas Instruments	PNP	SINGLE	NO	500 MHz	.05 W	.01 A	1	Other Transistors	5	85 Cel
2N1400	Texas Instruments	PNP	SINGLE	NO	600 MHz	.05 W	.01 A	1	Other Transistors	5	85 Cel
2N1398	Texas Instruments	PNP	SINGLE	NO	600 MHz	.05 W	.01 A	1	Other Transistors	10	85 Cel
3N32	Texas Instruments	NPN	SINGLE		4.3 MHz	.125 W	.01 A	1	Other Transistors		150 Cel
2N1402	Texas Instruments	PNP	SINGLE	NO	350 MHz	.05 W	.01 A	1	Other Transistors	3.5	85 Cel
3N27	Texas Instruments	NPN	SINGLE			.125 W	.01 A	1	Other Transistors		125 Cel
3N33	Texas Instruments	NPN	SINGLE		12 MHz	.125 W	.01 A	1	Other Transistors		150 Cel
2S327	Texas Instruments	PNP	SINGLE	NO	2 MHz	.05 W	.01 A	1	Other Transistors		175 Cel
2S326	Texas Instruments	PNP	SINGLE	NO	1 MHz	.05 W	.01 A	1	Other Transistors		150 Cel
2N1399	Texas Instruments	PNP	SINGLE	NO	600 MHz	.05 W	.01 A	1	Other Transistors	3.5	85 Cel
3N26	Texas Instruments	NPN	SINGLE			.125 W	.01 A	1	Other Transistors		125 Cel
2SC4710	Onsemi	NPN	SINGLE	NO		2 W	.01 A	1	Other Transistors	10
2SC4637	Onsemi	NPN	SINGLE	NO			.01 A	1	Other Transistors	10
2SC4632	Onsemi	NPN	SINGLE	NO	6 MHz	1.7 W	.01 A	1	Other Transistors	10	150 Cel
AF289	Infineon Technologies	PNP	SINGLE	YES	900 MHz	.06 W	.01 A	1	Other Transistors	12	100 Cel	Tin/Lead (Sn/Pb)		e0
AF139	Infineon Technologies	PNP	SINGLE	NO	580 MHz	.06 W	.01 A	1	Other Transistors	40	100 Cel	Tin/Lead (Sn/Pb)		e0
BFR705L3RH-E6327	Infineon Technologies	NPN	SINGLE	YES		.04 W	.01 A	1	Other Transistors	160	150 Cel		1		260
AF109R	Infineon Technologies	PNP	SINGLE	NO		.06 W	.01 A	1	Other Transistors	50	100 Cel	Tin/Lead (Sn/Pb)		e0
AF239	Infineon Technologies	PNP	SINGLE	NO	770 MHz	.06 W	.01 A	1	Other Transistors	40	100 Cel	Tin/Lead (Sn/Pb)		e0
AF239S	Infineon Technologies	PNP	SINGLE	NO	700 MHz	.06 W	.01 A	1	Other Transistors	40	100 Cel	Tin/Lead (Sn/Pb)		e0
AF280S	Infineon Technologies	PNP	SINGLE	NO		.06 W	.01 A	1	Other Transistors		100 Cel	Tin/Lead (Sn/Pb)		e0
AF279S	Infineon Technologies	PNP	SINGLE	NO	820 MHz	.06 W	.01 A	1	Other Transistors	45	75 Cel	Tin/Lead (Sn/Pb)		e0
AF240	Infineon Technologies	PNP	SINGLE	NO	650 MHz	.06 W	.01 A	1	Other Transistors		100 Cel	Tin/Lead (Sn/Pb)		e0
AF106	Infineon Technologies	PNP	SINGLE	NO	220 MHz	.06 W	.01 A	1	Other Transistors	50	100 Cel	Tin/Lead (Sn/Pb)		e0
BFR340F-E6433	Infineon Technologies	NPN	SINGLE	YES	11000 MHz	.06 W	.01 A	1	Other Transistors	90	150 Cel
BFR340L3-E6327	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.06 W	.01 A	1	Other Transistors	60	150 Cel		1		260
2SC5323(TE85L)	Toshiba	NPN	SINGLE	YES	13000 MHz	.15 W	.01 A	1	Other Transistors	50	125 Cel
2SC5324(TE85L)	Toshiba	NPN	SINGLE	YES	13000 MHz	.1 W	.01 A	1	Other Transistors	50	125 Cel
2SC5320(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.15 W	.01 A	1	Other Transistors	50	125 Cel
2SC5322FT(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.01 A	1	Other Transistors	50	125 Cel
HN3C18FU(TE85L)	Toshiba	NPN		YES	9000 MHz		.01 A		Other Transistors	50	125 Cel
2SC5322(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.01 A	1	Other Transistors	50	125 Cel
2SC5321(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.01 A	1	Other Transistors	50	125 Cel
2SC5009	Renesas Electronics	NPN	SINGLE	YES		.06 W	.01 A	1	Other Transistors	75	150 Cel
2SC5180-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
2SC4956	Renesas Electronics	NPN	SINGLE	YES		.06 W	.01 A	1	Other Transistors	75	150 Cel
NE68619-T1	Renesas Electronics	NPN	SINGLE	YES	8500 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
NE68633	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
NE68618-T1	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
NE68619	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
NE68618	Renesas Electronics	NPN	SINGLE	YES	12000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
2SC5180-T1-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
NE68639R	Renesas Electronics	NPN	SINGLE	YES	10500 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
2SC4958	Renesas Electronics	NPN	SINGLE	YES		.06 W	.01 A	1	Other Transistors	75	150 Cel
2SC4954	Renesas Electronics	NPN	SINGLE	YES		.06 W	.01 A	1	Other Transistors	75	150 Cel
NE68630	Renesas Electronics	NPN	SINGLE	YES	7500 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
2SC5014	Renesas Electronics	NPN	SINGLE	YES		.06 W	.01 A	1	Other Transistors	75	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.