.02 A Other Function Transistors 118

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SC4915R(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	40	125 Cel
2SC386A	Toshiba	NPN	SINGLE	NO	600 MHz	.2 W	.02 A	1	Other Transistors	40	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC2804	Toshiba	NPN	SINGLE	YES	900 MHz	.2 W	.02 A	1	Other Transistors		125 Cel	Tin/Lead (Sn/Pb)	e0
2SC4915R(TE85L)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	40	125 Cel
2SC2714Y(TE85L)	Toshiba	NPN	SINGLE	YES		.1 W	.02 A	1	Other Transistors	100	125 Cel
2SC389	Toshiba	NPN	SINGLE	NO	500 MHz	.15 W	.02 A	1	Other Transistors		150 Cel	Tin/Lead (Sn/Pb)	e0
2SC2714R(TE85L,F)	Toshiba	NPN	SINGLE	YES		.1 W	.02 A	1	Other Transistors	40	125 Cel
2SC392	Toshiba	NPN	SINGLE	NO	1000 MHz	.15 W	.02 A	1	Other Transistors	80	150 Cel	Tin/Lead (Sn/Pb)	e0
2SC5318(TE85L)	Toshiba	NPN	SINGLE	YES	13000 MHz	.15 W	.02 A	1	Other Transistors	50	125 Cel
2SC385A	Toshiba	NPN	SINGLE	NO	800 MHz	.2 W	.02 A	1	Other Transistors	20	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC5091FT(TE85L)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.02 A	1	Other Transistors	50	125 Cel
2SC2714O(TE85L,F)	Toshiba	NPN	SINGLE	YES		.1 W	.02 A	1	Other Transistors	70	125 Cel
2SC5315(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.15 W	.02 A	1	Other Transistors	50	125 Cel
2SC5319(TE85L)	Toshiba	NPN	SINGLE	YES	13000 MHz	.1 W	.02 A	1	Other Transistors	50
2SC4215Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	100	125 Cel
HN3C17FU(TE85L)	Toshiba	NPN		YES	9000 MHz		.02 A		Other Transistors	50	125 Cel
2SC786	Toshiba	NPN	SINGLE	NO	600 MHz	.2 W	.02 A	1	Other Transistors	50	150 Cel	Tin/Lead (Sn/Pb)	e0
2SC2714O(TE85L)	Toshiba	NPN	SINGLE	YES		.1 W	.02 A	1	Other Transistors	70	125 Cel
2SC2714R(TE85L)	Toshiba	NPN	SINGLE	YES		.1 W	.02 A	1	Other Transistors	40	125 Cel
2SC4915Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	100	125 Cel
2SC787	Toshiba	NPN	SINGLE	NO	1000 MHz	.15 W	.02 A	1	Other Transistors	25	150 Cel	Tin/Lead (Sn/Pb)	e0
2SC385	Toshiba	NPN	SINGLE	NO	600 MHz	.2 W	.02 A	1	Other Transistors	80	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC5317(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.02 A	1	Other Transistors	50	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC4915Y(TE85L)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	100	125 Cel
2SC391	Toshiba	NPN	SINGLE	NO	1200 MHz	.15 W	.02 A	1	Other Transistors		150 Cel	Tin/Lead (Sn/Pb)	e0
2SC2348	Toshiba	NPN	SINGLE	NO	400 MHz	.25 W	.02 A	1	Other Transistors	40	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC5316(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.02 A	1	Other Transistors	50	125 Cel
2SC3119	Toshiba	NPN	SINGLE	YES	900 MHz	.15 W	.02 A	1	Other Transistors	25	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC785	Toshiba	NPN	SINGLE	NO	500 MHz	.1 W	.02 A	1	Other Transistors	25	125 Cel	Tin/Lead (Sn/Pb)	e0
2SC5317FT(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.02 A	1	Other Transistors	50	125 Cel
2SC4215R(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	40	125 Cel
2SC4915O(TE85L)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	70	125 Cel
2SC4915O(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A	1	Other Transistors	70	125 Cel
2SC4178F13-T2-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	60	150 Cel
2SC2223F13-T2B-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	60	125 Cel
2SC2223F12-T1B-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	40	125 Cel
2SD2383-A	Renesas Electronics	NPN	SINGLE	YES		.2 W	.02 A	1	Other Transistors	100	150 Cel	TIN BISMUTH	e6	10	260
2SC2223F13-L-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	60	125 Cel
2SC2620B	Renesas Electronics	NPN	SINGLE	YES	940 MHz	.1 W	.02 A	1	Other Transistors	120	125 Cel
2SC5852C	Renesas Electronics	NPN	SINGLE	YES		.15 W	.02 A	1	Other Transistors	100	150 Cel
2SC5852B	Renesas Electronics	NPN	SINGLE	YES		.15 W	.02 A	1	Other Transistors	60	150 Cel
2SC2786KF	Renesas Electronics	NPN	SINGLE	NO	400 MHz	.25 W	.02 A	1	Other Transistors	90	150 Cel
2SC2223F14-T1B-A	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	90	125 Cel
2SC2223F14-T2B-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	90	125 Cel
2SC2223F13-T2B-A	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	60	125 Cel
2SC2223F14-T2B-A	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	90	125 Cel
2SC2223F13-T1B-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	60	125 Cel
2SC4178F12-T1-AT	Renesas Electronics	NPN	SINGLE	YES	400 MHz	.15 W	.02 A	1	Other Transistors	40	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.