.04 A Other Function Transistors 44

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2N3839

National Semiconductor

NPN

SINGLE

NO

1000 MHz

.2 W

.04 A

1

Other Transistors

30

200 Cel

Tin/Lead (Sn/Pb)

e0

MPSH10DIE

Onsemi

NPN

SINGLE

650 MHz

.35 W

.04 A

1

Other Transistors

60

150 Cel

EC4H09C-TL-H

Onsemi

NPN

SINGLE

YES

20000 MHz

.12 W

.04 A

1

Other Transistors

70

150 Cel

1

EC4H09C

Onsemi

NPN

SINGLE

YES

20000 MHz

.12 W

.04 A

1

Other Transistors

70

150 Cel

BF752-E6327

Infineon Technologies

NPN

SINGLE

YES

32000 MHz

.1 W

.04 A

1

Other Transistors

70

150 Cel

1

260

BF752-E6433

Infineon Technologies

NPN

SINGLE

YES

32000 MHz

.1 W

.04 A

1

Other Transistors

70

150 Cel

BFP520F-E6433

Infineon Technologies

NPN

SINGLE

YES

.1 W

.04 A

1

Other Transistors

70

150 Cel

BFQ645

Infineon Technologies

NPN

SINGLE

YES

.4 W

.04 A

1

Other Transistors

50

175 Cel

Tin/Lead (Sn/Pb)

e0

BFP520F-E6327

Infineon Technologies

NPN

SINGLE

YES

.1 W

.04 A

1

Other Transistors

70

150 Cel

1

260

HN9C04FT(TE85L)

Toshiba

NPN

YES

7000 MHz

.04 A

Other Transistors

50

125 Cel

MT4S23U(TE85L)

Toshiba

NPN

SINGLE

YES

13000 MHz

.17 W

.04 A

1

Other Transistors

50

150 Cel

MT3S03AT(TE85L,F)

Toshiba

NPN

SINGLE

YES

3000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

MT4S04AU(TE85L)

Toshiba

NPN

SINGLE

5000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

MT4S03BU(TE85L,F)

Toshiba

NPN

SINGLE

YES

9000 MHz

.175 W

.04 A

1

Other Transistors

80

150 Cel

2SC5086FT(TE85L)

Toshiba

NPN

SINGLE

YES

5000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

MT6L58AE(TPL3,F)

Toshiba

NPN

YES

3000 MHz

.1 W

.04 A

Other Transistors

70

125 Cel

MT3S03AT(TE85L)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

HN3C15FU(TE85L)

Toshiba

NPN

YES

9000 MHz

.04 A

Other Transistors

50

125 Cel

MT6P03AE(TE85L)

Toshiba

NPN

YES

5000 MHz

.1 W

.04 A

Other Transistors

80

125 Cel

HN9C05FT(TE85L)

Toshiba

NPN

YES

7000 MHz

.04 A

Other Transistors

50

125 Cel

MT3S04AT(TE85L)

Toshiba

NPN

SINGLE

5000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

MT4S03BU(TE85L)

Toshiba

NPN

SINGLE

YES

9000 MHz

.175 W

.04 A

1

Other Transistors

80

150 Cel

MT6L05FS(TPL3)

Toshiba

NPN

YES

2000 MHz

.11 W

.04 A

Other Transistors

80

125 Cel

MT3S03AU(TE85L,F)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

2SC5256FT(TE85L)

Toshiba

NPN

SINGLE

YES

9000 MHz

.1 W

.04 A

1

Other Transistors

50

125 Cel

HN3C11FU(TE85L)

Toshiba

NPN

YES

7000 MHz

.04 A

Other Transistors

50

125 Cel

HN9C18FT(TE85L)

Toshiba

NPN

YES

7000 MHz

.04 A

Other Transistors

50

125 Cel

HN2C11FU(TE85L)

Toshiba

NPN

YES

7000 MHz

.04 A

Other Transistors

50

125 Cel

MT3S03AU(TE85L)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

MT6L58AE(TE85L,F)

Toshiba

NPN

YES

3000 MHz

.1 W

.04 A

Other Transistors

70

125 Cel

MT6C03AE(TE85L)

Toshiba

NPN

YES

3000 MHz

.1 W

.04 A

Other Transistors

80

125 Cel

HN9C15FT(TE85L)

Toshiba

NPN

YES

9000 MHz

.04 A

Other Transistors

50

125 Cel

MT6L62AE(TPL3,F)

Toshiba

NPN

YES

5000 MHz

.1 W

.04 A

Other Transistors

70

125 Cel

MT3S04AS(TE85L,F)

Toshiba

NPN

SINGLE

YES

2000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

HN2C10FU(TE85L)

Toshiba

NPN

YES

5000 MHz

.04 A

Other Transistors

80

125 Cel

MT6L62AE(TPL3)

Toshiba

NPN

YES

5000 MHz

.1 W

.04 A

Other Transistors

70

125 Cel

MT6L62AE(TE85L,F)

Toshiba

NPN

YES

5000 MHz

.1 W

.04 A

Other Transistors

70

125 Cel

MT3S03AS(TE85L)

Toshiba

NPN

SINGLE

5000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

HN9C08FT(TE85L)

Toshiba

NPN

YES

7000 MHz

.04 A

Other Transistors

50

125 Cel

MT4S23U(TE85L,F)

Toshiba

NPN

SINGLE

YES

13000 MHz

.17 W

.04 A

1

Other Transistors

50

150 Cel

MT6L58AE(TPL3)

Toshiba

NPN

YES

3000 MHz

.1 W

.04 A

Other Transistors

70

125 Cel

MT4S03AU(TE85L)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

UPA869TS

Renesas Electronics

NPN

YES

3000 MHz

.11 W

.04 A

Other Transistors

100

150 Cel

UPA869TS-T3

Renesas Electronics

NPN

YES

3000 MHz

.11 W

.04 A

Other Transistors

100

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.