.1 A Other Function Transistors 1,080

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
PBLS4002YT2-165	NXP Semiconductors	NPN AND PNP		YES		.3 W	.1 A	2	Other Transistors	30		SILICON
BC847CMT/R	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	420	150 Cel
BC847BMT/R	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	200	150 Cel
BC857AMB,315	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	125	150 Cel		TIN	1	e3	30	260
BC847TT/R	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.15 W	.1 A	1	Other Transistors	110	150 Cel
BC846DS,115	NXP Semiconductors	NPN		YES	100 MHz	.38 W	.1 A		Other Transistors	200	150 Cel		TIN	1	e3	30	260
PMBTA20T/R	NXP Semiconductors	NPN	SINGLE	YES			.1 A	1	Other Transistors	40
BC847AMT/R	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	110	150 Cel
BC847DS,115	NXP Semiconductors	NPN		YES	100 MHz	.38 W	.1 A		Other Transistors	200	150 Cel		TIN	1	e3	30	260
BC846/DG,215	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	110	150 Cel
BC846B/AU,235	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	200	150 Cel
BC857C,185	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	.25 W	.1 A	1	Other Transistors	420	150 Cel		TIN	1	e3	30	260
BFR106-E6433	Infineon Technologies	NPN	SINGLE	YES	3500 MHz	.7 W	.1 A	1	Other Transistors	40	150 Cel
BFP196-E6433	Infineon Technologies	NPN	SINGLE	YES	5000 MHz	.7 W	.1 A	1	Other Transistors	50	150 Cel
BFQ196	Infineon Technologies	NPN	SINGLE	YES		.65 W	.1 A	1	Other Transistors	50	175 Cel		Tin/Lead (Sn/Pb)		e0
BF850BF-E6433	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A	1	Other Transistors	200	150 Cel
BCV61-E6327	Infineon Technologies	NPN		YES		.3 W	.1 A		Other Transistors	100	150 Cel
BC860BF-E6433	Infineon Technologies	PNP	SINGLE	YES		.25 W	.1 A	1	Other Transistors	220	150 Cel
BCY77IX	Infineon Technologies	PNP	SINGLE	NO	180 MHz	1 W	.1 A	1	Other Transistors		175 Cel		Tin/Lead (Sn/Pb)		e0
BF847	Infineon Technologies	PNP	SINGLE	NO	90 MHz	1.8 W	.1 A	1	Other Transistors	25	140 Cel		Tin/Lead (Sn/Pb)		e0
BC415	Infineon Technologies	PNP	SINGLE	NO		.35 W	.1 A	1	Other Transistors	120	150 Cel
BCY65E	Infineon Technologies	PNP	SINGLE	NO	125 MHz	1 W	.1 A	1	Other Transistors		175 Cel		Tin/Lead (Sn/Pb)		e0
BC416	Infineon Technologies	PNP	SINGLE	NO		.35 W	.1 A	1	Other Transistors	120	150 Cel
BFQ194	Infineon Technologies	PNP	SINGLE	YES		.65 W	.1 A	1	Other Transistors	20	175 Cel		Tin/Lead (Sn/Pb)		e0
BCM856S-E6433	Infineon Technologies	PNP		YES		.25 W	.1 A		Other Transistors	200	150 Cel
BC413	Infineon Technologies	NPN	SINGLE	NO		.35 W	.1 A	1	Other Transistors	180	150 Cel
BF850BF-E6327	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A	1	Other Transistors	200	150 Cel
BCM856S-E6327	Infineon Technologies	PNP		YES		.25 W	.1 A		Other Transistors	200	150 Cel			1			260
BCY77VII	Infineon Technologies	PNP	SINGLE	NO	180 MHz	1 W	.1 A	1	Other Transistors		175 Cel		Tin/Lead (Sn/Pb)		e0
BC414	Infineon Technologies	NPN	SINGLE	NO		.35 W	.1 A	1	Other Transistors	180	150 Cel
BCM846S-E6433	Infineon Technologies	NPN		YES		.25 W	.1 A		Other Transistors	200	150 Cel
BF848	Infineon Technologies	PNP	SINGLE	NO	90 MHz	1.8 W	.1 A	1	Other Transistors	25	140 Cel		Tin/Lead (Sn/Pb)		e0
BFG196-E6433	Infineon Technologies	NPN	SINGLE	YES	5000 MHz	.8 W	.1 A	1	Other Transistors	50	150 Cel		TIN LEAD		e0
BC860BF-E6327	Infineon Technologies	PNP	SINGLE	YES		.25 W	.1 A	1	Other Transistors	220	150 Cel
BCV61-E6433	Infineon Technologies	NPN		YES		.3 W	.1 A		Other Transistors	100	150 Cel
BFQ73S	Infineon Technologies	NPN	SINGLE	YES		.5 W	.1 A	1	Other Transistors		175 Cel
BCM846S-E6327	Infineon Technologies	NPN		YES		.25 W	.1 A		Other Transistors	200	150 Cel			1			260
BC849BF-E6433	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A	1	Other Transistors	200	150 Cel
BC849BFE6327	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A	1	Other Transistors	200	150 Cel
BC846U-E6433	Infineon Technologies	NPN		YES		.25 W	.1 A		Other Transistors	200	150 Cel
BC547VI	Infineon Technologies	NPN	SINGLE	NO	300 MHz	.5 W	.1 A	1	Other Transistors	110	150 Cel		Tin/Lead (Sn/Pb)		e0
SMBTA20	Infineon Technologies	NPN	SINGLE	YES	125 MHz	.33 W	.1 A	1	Other Transistors		150 Cel		Tin/Lead (Sn/Pb)		e0
BC557VI	Infineon Technologies	PNP	SINGLE	NO	150 MHz	.5 W	.1 A	1	Other Transistors		150 Cel		Tin/Lead (Sn/Pb)		e0
BC848BF-E6433	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A	1	Other Transistors	200	150 Cel
BC846S-E6327	Infineon Technologies	NPN		YES		.25 W	.1 A		Other Transistors	200	150 Cel			1			260
BC857BF-E6327	Infineon Technologies	PNP	SINGLE	YES		.25 W	.1 A	1	Other Transistors	220	150 Cel
BC856S-E6433	Infineon Technologies	PNP		YES		.25 W	.1 A		Other Transistors	200	150 Cel
BC847BF-E6433	Infineon Technologies	NPN	SINGLE	YES		.25 W	.1 A	1	Other Transistors	200	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.