.2 A Other Function Transistors 533

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Moisture Sensitivity Level (MSL)	JESD-609 Code	Peak Reflow Temperature (C)
BSY62B	Infineon Technologies	NPN	SINGLE	NO	200 MHz	.4 W	.2 A	1	Other Transistors	300	175 Cel	Tin/Lead (Sn/Pb)		e0
AC151RV	Infineon Technologies	PNP	SINGLE	NO	1.5 MHz	.3 W	.2 A	1	Other Transistors		100 Cel	Tin/Lead (Sn/Pb)		e0
BFN26-E6433	Infineon Technologies	NPN	SINGLE	YES		.36 W	.2 A	1	Other Transistors	30	150 Cel		1		260
BCY65EVII	Infineon Technologies	NPN	SINGLE	NO	250 MHz	1 W	.2 A	1	Other Transistors		175 Cel	Tin/Lead (Sn/Pb)		e0
BCY65EVIII	Infineon Technologies	NPN	SINGLE	NO	250 MHz	1 W	.2 A	1	Other Transistors		175 Cel	Tin/Lead (Sn/Pb)		e0
BFN16E6327	Infineon Technologies	NPN	SINGLE	YES		1 W	.2 A	1	Other Transistors	40	150 Cel	TIN LEAD	1	e0	235
BFN24-E6327	Infineon Technologies	NPN	SINGLE	YES		.36 W	.2 A	1	Other Transistors	40	150 Cel		1		260
AC151RIV	Infineon Technologies	PNP	SINGLE	NO	1.5 MHz	.3 W	.2 A	1	Other Transistors		100 Cel	Tin/Lead (Sn/Pb)		e0
BCY77	Infineon Technologies	PNP	SINGLE	NO	180 MHz	.4 W	.2 A	1	Other Transistors	120	175 Cel	Tin/Lead (Sn/Pb)		e0
BFN38-E6327	Infineon Technologies	NPN	SINGLE	YES		1.5 W	.2 A	1	Other Transistors	25	150 Cel		1		260
AC151V	Infineon Technologies	PNP	SINGLE	NO	1.5 MHz	.3 W	.2 A	1	Other Transistors		100 Cel	Tin/Lead (Sn/Pb)		e0
BFN16-E6433	Infineon Technologies	NPN	SINGLE	YES		1 W	.2 A	1	Other Transistors	40	150 Cel	Tin/Lead (Sn/Pb)		e0
SXT3906	Infineon Technologies	NPN	SINGLE	YES	250 MHz	1 W	.2 A	1	Other Transistors	100	150 Cel	Tin/Lead (Sn/Pb)		e0
BFN38-E6433	Infineon Technologies	NPN	SINGLE	YES		1.5 W	.2 A	1	Other Transistors	25	150 Cel
BCY65EIX	Infineon Technologies	NPN	SINGLE	NO	250 MHz	1 W	.2 A	1	Other Transistors		175 Cel	Tin/Lead (Sn/Pb)		e0
SMBT3906U-E6327	Infineon Technologies	PNP		YES	250 MHz	.33 W	.2 A		Other Transistors	30	150 Cel		1		260
SMBT6429	Infineon Technologies	NPN	SINGLE	YES	100 MHz	.33 W	.2 A	1	Other Transistors	500		Tin/Lead (Sn/Pb)		e0
SMBT3904L3-E6327	Infineon Technologies	NPN		YES	300 MHz	.33 W	.2 A		Other Transistors	30	150 Cel
SMBT6428	Infineon Technologies	NPN	SINGLE	YES	100 MHz	.33 W	.2 A	1	Other Transistors	250		Tin/Lead (Sn/Pb)		e0
SMBTA70	Infineon Technologies	PNP	SINGLE	YES	125 MHz	.33 W	.2 A	1	Other Transistors	40	150 Cel	Tin/Lead (Sn/Pb)		e0
SMBT3904U-E6433	Infineon Technologies	NPN		YES	300 MHz	.33 W	.2 A		Other Transistors	30	150 Cel
SMBT4126	Infineon Technologies	PNP	SINGLE	YES	250 MHz	.33 W	.2 A	1	Other Transistors	120		Tin/Lead (Sn/Pb)		e0
SMBT3904S-E6433	Infineon Technologies	NPN		YES	300 MHz	.25 W	.2 A		Other Transistors	30	150 Cel
SMBT3906S-E6433	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.2 A	1	Other Transistors	30	150 Cel
SMBT3906SE6327	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.2 A	1	Other Transistors	30	150 Cel		1		260
SMBT3906U-E6433	Infineon Technologies	PNP		YES	250 MHz	.33 W	.2 A		Other Transistors	30	150 Cel
SMBT3904U-E6327	Infineon Technologies	NPN		YES	300 MHz	.33 W	.2 A		Other Transistors	30	150 Cel		1		260
SMBT4124	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.2 A	1	Other Transistors	120		Tin/Lead (Sn/Pb)		e0
MMBT3904-E6433	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.2 A	1	Other Transistors	100	150 Cel
SMBT3906L3-E6327	Infineon Technologies	PNP	SINGLE	YES	250 MHz		.2 A	1	Other Transistors	30	150 Cel
MMBT3904-E6327	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.2 A	1	Other Transistors	100	150 Cel
MMBT3906-E6433	Infineon Technologies	PNP	SINGLE	YES	250 MHz	.33 W	.2 A	1	Other Transistors	30	150 Cel
MMBT3906-E6327	Infineon Technologies	PNP	SINGLE	YES	250 MHz	.33 W	.2 A	1	Other Transistors	30	150 Cel
MMST4126	Diodes Incorporated	PNP	SINGLE	YES	250 MHz	.2 W	.2 A	1	Other Transistors	60	150 Cel	Tin/Lead (Sn/Pb)		e0
MMSTA42	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	.2 W	.2 A	1	Other Transistors	40	150 Cel
MMDT4124	Diodes Incorporated	NPN		YES	300 MHz	.2 W	.2 A		Other Transistors	60	150 Cel	Tin/Lead (Sn/Pb)		e0
MMDT4126	Diodes Incorporated	PNP		YES	250 MHz	.2 W	.2 A		Other Transistors	60	150 Cel	Tin/Lead (Sn/Pb)		e0
MMST4124	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.2 A	1	Other Transistors	60	150 Cel	Tin/Lead (Sn/Pb)		e0
MMDT3904S	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.2 A	1	Other Transistors	30	150 Cel
2SC3803-O(TE12L)	Toshiba	NPN	SINGLE	YES	100 MHz	1 W	.2 A	1	Other Transistors	70	150 Cel
YTS3905	Toshiba	PNP	SINGLE	YES	200 MHz	.62 W	.2 A	1	Other Transistors	50	150 Cel	Tin/Lead (Sn/Pb)		e0
2N3904(TE2,T)	Toshiba	NPN	SINGLE	NO	300 MHz	.35 W	.2 A	1	Other Transistors	100	150 Cel	Tin/Lead (Sn/Pb)		e0
2SC3803-R(TE12L,F)	Toshiba	NPN	SINGLE	YES	100 MHz	1 W	.2 A	1	Other Transistors	40	150 Cel
2SC3803-Y(TE12L,F)	Toshiba	NPN	SINGLE	YES	100 MHz	1 W	.2 A	1	Other Transistors	120	150 Cel
2SA594	Toshiba	PNP	SINGLE	NO	200 MHz	.75 W	.2 A	1	Other Transistors	60	175 Cel	Tin/Lead (Sn/Pb)		e0
2SC594	Toshiba	NPN	SINGLE	NO	200 MHz	.75 W	.2 A	1	Other Transistors		175 Cel	Tin/Lead (Sn/Pb)		e0
2SC2231A	Toshiba	NPN	SINGLE	NO	50 MHz	12 W	.2 A	1	Other Transistors	100	140 Cel	Tin/Lead (Sn/Pb)		e0
YTS4125	Toshiba	PNP	SINGLE	YES	200 MHz	.62 W	.2 A	1	Other Transistors	50	150 Cel	Tin/Lead (Sn/Pb)		e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.