.8 A Other Function Transistors 219

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SC2235-O(TPE6,F)

Toshiba

NPN

NO

.9 W

.8 A

Other Transistors

80

150 Cel

S1807

Toshiba

NPN

SINGLE

NO

120 MHz

.625 W

.8 A

1

Other Transistors

100

Tin/Lead (Sn/Pb)

e0

2SC497

Toshiba

NPN

SINGLE

NO

80 MHz

.6 W

.8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

HN1A02FY(TE85L)

Toshiba

PNP

YES

.3 W

.8 A

Other Transistors

120

150 Cel

2SC2881-O(TE12L)

Toshiba

NPN

SINGLE

YES

1 W

.8 A

1

Other Transistors

80

150 Cel

2SC3665-Y(TPF2,F)

Toshiba

NPN

SINGLE

NO

1 W

.8 A

1

Other Transistors

120

150 Cel

2SC509GTM

Toshiba

NPN

SINGLE

NO

100 MHz

.6 W

.8 A

1

Other Transistors

70

Tin/Lead (Sn/Pb)

e0

2SC3051

Toshiba

NPN

SINGLE

NO

10 W

.8 A

1

Other Transistors

20

140 Cel

Tin/Lead (Sn/Pb)

e0

2SA509GTM

Toshiba

PNP

SINGLE

NO

100 MHz

.6 W

.8 A

1

Other Transistors

70

Tin/Lead (Sn/Pb)

e0

2SA497

Toshiba

PNP

SINGLE

NO

70 MHz

.6 W

.8 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC4210-O(TE85L,F)

Toshiba

NPN

SINGLE

YES

.2 W

.8 A

1

Other Transistors

100

150 Cel

2SC4210-Y(TE85L,F)

Toshiba

NPN

SINGLE

YES

.2 W

.8 A

1

Other Transistors

160

150 Cel

TEC9013

Toshiba

NPN

SINGLE

NO

.625 W

.8 A

1

Other Transistors

96

Tin/Lead (Sn/Pb)

e0

HN1A02FGR(TE85L)

Toshiba

PNP

YES

.3 W

.8 A

Other Transistors

200

150 Cel

2SC5458(SM)

Toshiba

NPN

SINGLE

YES

10 W

.8 A

1

Other Transistors

20

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC2235-Y(TPE6)

Toshiba

NPN

NO

.9 W

.8 A

Other Transistors

120

150 Cel

TEC9012

Toshiba

PNP

SINGLE

NO

.625 W

.8 A

1

Other Transistors

96

Tin/Lead (Sn/Pb)

e0

2SC2884-O(TE12L)

Toshiba

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

100

150 Cel

2SC3665-Y(TPF2,Q)

Toshiba

NPN

SINGLE

NO

1 W

.8 A

1

Other Transistors

120

150 Cel

2SC2235-O(TPE6)

Toshiba

NPN

NO

.9 W

.8 A

Other Transistors

80

150 Cel

2SC109A

Toshiba

NPN

SINGLE

NO

150 MHz

.8 W

.8 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

2SC108A

Toshiba

NPN

SINGLE

NO

150 MHz

.8 W

.8 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

2SC3405(SM)

Toshiba

NPN

SINGLE

YES

20 W

.8 A

1

Other Transistors

6

150 Cel

Tin/Lead (Sn/Pb)

e0

HN1A02FY(TE85L,F)

Toshiba

PNP

YES

.3 W

.8 A

Other Transistors

120

150 Cel

2SC496

Toshiba

NPN

SINGLE

NO

100 MHz

5 W

.8 A

1

Other Transistors

40

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC2884-Y(TE12L,F)

Toshiba

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

160

150 Cel

2SA1204-Y(TE12L,C)

Toshiba

PNP

SINGLE

YES

1 W

.8 A

1

Other Transistors

160

150 Cel

2SA1425-O(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

80

150 Cel

2SA1425-Y(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

120

150 Cel

2SA1204-Y(TE12L,CF)

Toshiba

PNP

SINGLE

YES

1 W

.8 A

1

Other Transistors

160

150 Cel

2SA1426-Y(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

160

150 Cel

2SA1425-O(TPF2,F)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

80

150 Cel

2SA1201-Y(TE12L,C)

Toshiba

PNP

SINGLE

YES

1 W

.8 A

1

Other Transistors

120

150 Cel

2SA1425-Y(TPF2,F)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

120

150 Cel

2SA1426-O(TPF2)

Toshiba

PNP

SINGLE

NO

1 W

.8 A

1

Other Transistors

100

150 Cel

2SA1621-O(TE85L)

Toshiba

PNP

SINGLE

YES

.2 W

.8 A

1

Other Transistors

100

150 Cel

2SD1699TQ-T2-AZ

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

8000

150 Cel

2SD1699TR-T1-AZ

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1699-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1702-T1-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1699-T1-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1699TR-T2-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1699TR-T1-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1699TQ-T1-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

8000

150 Cel

2SD1702TF-T2-AZ

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1697L

Renesas Electronics

NPN

DARLINGTON

NO

1 W

.8 A

Other Transistors

4000

150 Cel

2SD1702-T2-AY

Renesas Electronics

NPN

DARLINGTON

YES

2 W

.8 A

Other Transistors

4000

150 Cel

2SD1700K

Renesas Electronics

NPN

DARLINGTON

NO

1 W

.8 A

Other Transistors

8000

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.