1 A Other Function Transistors 791

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BD975

Infineon Technologies

NPN

DARLINGTON

NO

200 MHz

1.6 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BD880

Infineon Technologies

PNP

DARLINGTON

NO

200 MHz

9 W

1 A

Other Transistors

2000

150 Cel

Tin/Lead (Sn/Pb)

e0

BD980

Infineon Technologies

PNP

DARLINGTON

NO

200 MHz

1.6 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BSP61-E6433

Infineon Technologies

PNP

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BD977

Infineon Technologies

NPN

SINGLE

NO

200 MHz

3.6 W

1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BSX47-6

Infineon Technologies

NPN

SINGLE

NO

50 MHz

5 W

1 A

1

Other Transistors

40

175 Cel

Tin/Lead (Sn/Pb)

e0

BSP50-E6433

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

TIN LEAD

e0

BSV17-6

Infineon Technologies

PNP

SINGLE

NO

50 MHz

1 W

1 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BSP60-E6433

Infineon Technologies

PNP

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

TIN LEAD

1

e0

235

BSP52-E6433

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BSP51-E6433

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BD875

Infineon Technologies

NPN

DARLINGTON

NO

200 MHz

1.2 W

1 A

Other Transistors

2000

150 Cel

Tin/Lead (Sn/Pb)

e0

BD978

Infineon Technologies

PNP

SINGLE

NO

200 MHz

3.6 W

1 A

1

Other Transistors

140 Cel

Tin/Lead (Sn/Pb)

e0

BD877

Infineon Technologies

NPN

DARLINGTON

NO

200 MHz

1.2 W

1 A

Other Transistors

2000

150 Cel

Tin/Lead (Sn/Pb)

e0

BCP51H6327XTSA1

Infineon Technologies

PNP

SINGLE

YES

2 W

1 A

1

Other Transistors

40

150 Cel

TIN

1

e3

BCX6810H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

3 W

1 A

1

Other Transistors

85

150 Cel

TIN

1

e3

BSP61-E6327

Infineon Technologies

PNP

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

1

260

BSP51-E6327

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

1

260

BD878

Infineon Technologies

PNP

DARLINGTON

NO

200 MHz

9 W

1 A

Other Transistors

2000

150 Cel

Tin/Lead (Sn/Pb)

e0

BD979

Infineon Technologies

NPN

DARLINGTON

NO

200 MHz

1.6 W

1 A

Other Transistors

1000

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX53-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BCX54-6

Infineon Technologies

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BCX52-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BCX51H6327XTSA1

Infineon Technologies

PNP

SINGLE

YES

2 W

1 A

1

Other Transistors

40

150 Cel

TIN

1

e3

BCX55-6

Infineon Technologies

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BCX55H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

2 W

1 A

1

Other Transistors

40

150 Cel

TIN

1

e3

BCX51-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BCX56-6

Infineon Technologies

NPN

SINGLE

YES

50 MHz

1 W

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

ZUMT491TC

Diodes Incorporated

NPN

SINGLE

YES

.5 W

1 A

1

Other Transistors

150 Cel

MATTE TIN

e3

30

260

BCX68-16TC

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

100

150 Cel

BCX68-16TA

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

100

150 Cel

BCX68TC

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

85

150 Cel

BCX68-25TC

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

1 W

1 A

1

Other Transistors

160

150 Cel

MMBT123S

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.35 W

1 A

1

Other Transistors

150

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC2383-O(TPE6)

Toshiba

NPN

SINGLE

NO

20 MHz

.9 W

1 A

1

Other Transistors

100

150 Cel

2SC6034(TPF2,Q)

Toshiba

NPN

SINGLE

NO

1 W

1 A

1

Other Transistors

100

150 Cel

2SD2686(TE12L,F)

Toshiba

NPN

2 BANKS, DARLINGTON

NO

2.5 W

1 A

Other Transistors

2000

150 Cel

2SC6034(TPF2)

Toshiba

NPN

SINGLE

NO

1 W

1 A

1

Other Transistors

100

150 Cel

2SC6135(TE85L)

Toshiba

NPN

SINGLE

YES

.8 W

1 A

1

Other Transistors

400

150 Cel

2SA512

Toshiba

PNP

SINGLE

NO

50 MHz

.8 W

1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC5930(TPF2,F)

Toshiba

NPN

SINGLE

NO

1 W

1 A

1

Other Transistors

30

150 Cel

2SC2383-O(TPE6,F)

Toshiba

NPN

SINGLE

NO

20 MHz

.9 W

1 A

1

Other Transistors

100

150 Cel

2SC2824

Toshiba

NPN

SINGLE

NO

120 MHz

1 W

1 A

1

Other Transistors

80

150 Cel

Tin/Lead (Sn/Pb)

e0

TTA007(TE85L)

Toshiba

PNP

SINGLE

YES

1.1 W

1 A

1

Other Transistors

200

150 Cel

TTC005(TE12L)

Toshiba

NPN

SINGLE

YES

2.8 W

1 A

1

Other Transistors

80

150 Cel

TPCP8510(TE85L)

Toshiba

NPN

SINGLE

YES

2.25 W

1 A

1

Other Transistors

120

150 Cel

TTC007(TE85L,F)

Toshiba

NPN

SINGLE

YES

1.1 W

1 A

1

Other Transistors

400

150 Cel

2SC3666-Y(TPF2)

Toshiba

NPN

SINGLE

NO

1 W

1 A

1

Other Transistors

160

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.