8 A Other Function Transistors 235

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SA1732S

Onsemi

PNP

SINGLE

NO

250 MHz

15 W

8 A

1

Other Transistors

140

150 Cel

2SA1825T

Onsemi

PNP

SINGLE

NO

1.5 W

8 A

1

Other Transistors

200

150 Cel

2SA1798

Onsemi

PNP

SINGLE

NO

1.5 W

8 A

1

Other Transistors

100

2SA1641T(TP)

Onsemi

PNP

SINGLE

NO

15 W

8 A

1

Other Transistors

200

150 Cel

2SA1641T

Onsemi

PNP

SINGLE

YES

200 MHz

15 W

8 A

1

Other Transistors

200

150 Cel

2SA1641S(TP)

Onsemi

PNP

SINGLE

NO

15 W

8 A

1

Other Transistors

140

150 Cel

2SA1732R(TP-FA)

Onsemi

PNP

SINGLE

YES

15 W

8 A

1

Other Transistors

100

150 Cel

2SA1732Q(TP)

Onsemi

PNP

SINGLE

NO

15 W

8 A

1

Other Transistors

70

150 Cel

BUH615

STMicroelectronics

NPN

SINGLE

NO

54 W

8 A

1

Other Transistors

5

150 Cel

SGSD00037

STMicroelectronics

NPN

SINGLE

NO

.02 MHz

120 W

8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

SD1658

STMicroelectronics

NPN

SINGLE

NO

175 W

8 A

1

Other Transistors

10

200 Cel

SGSD00039

STMicroelectronics

NPN

SINGLE

NO

.02 MHz

120 W

8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

ST13007NFP

STMicroelectronics

NPN

SINGLE

NO

33 W

8 A

1

Other Transistors

5

150 Cel

MATTE TIN

e3

SGSD00038

STMicroelectronics

NPN

SINGLE

NO

.02 MHz

120 W

8 A

1

Other Transistors

200 Cel

Tin/Lead (Sn/Pb)

e0

ST13007N

STMicroelectronics

NPN

SINGLE

NO

80 W

8 A

1

Other Transistors

5

150 Cel

TIN LEAD

e0

SGSD00041

STMicroelectronics

NPN

SINGLE

NO

.02 MHz

90 W

8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BDX54D

STMicroelectronics

PNP

DARLINGTON

NO

60 W

8 A

Other Transistors

750

150 Cel

SGS6386

STMicroelectronics

NPN

DARLINGTON

NO

65 W

8 A

Other Transistors

1000

Tin/Lead (Sn/Pb)

e0

SGSD00040

STMicroelectronics

NPN

SINGLE

NO

.02 MHz

90 W

8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

SGSD00036

STMicroelectronics

NPN

SINGLE

NO

.02 MHz

120 W

8 A

1

Other Transistors

200 Cel

Tin/Lead (Sn/Pb)

e0

BUJD105AD,118

NXP Semiconductors

NPN

SINGLE

YES

80 W

8 A

1

Other Transistors

10

150 Cel

TIN

1

e3

30

260

BD203

NXP Semiconductors

NPN

SINGLE

NO

7 MHz

60 W

8 A

1

Other Transistors

30

150 Cel

BD204

NXP Semiconductors

PNP

SINGLE

NO

7 MHz

60 W

8 A

1

Other Transistors

30

150 Cel

BDX78

NXP Semiconductors

PNP

SINGLE

NO

7 MHz

60 W

8 A

1

Other Transistors

30

150 Cel

BD202

NXP Semiconductors

PNP

SINGLE

NO

7 MHz

60 W

8 A

1

Other Transistors

30

140 Cel

BD643

Infineon Technologies

NPN

DARLINGTON

NO

100 MHz

62 W

8 A

Other Transistors

750

150 Cel

Tin/Lead (Sn/Pb)

e0

BD650

Infineon Technologies

PNP

DARLINGTON

NO

100 MHz

62.5 W

8 A

Other Transistors

750

150 Cel

Tin/Lead (Sn/Pb)

e0

BUX28

Infineon Technologies

NPN

DARLINGTON

NO

80 W

8 A

Other Transistors

300

175 Cel

Tin/Lead (Sn/Pb)

e0

BD644

Infineon Technologies

PNP

DARLINGTON

NO

100 MHz

62.5 W

8 A

Other Transistors

750

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC3344

Toshiba

NPN

SINGLE

NO

60 W

8 A

1

Other Transistors

10

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC3181

Toshiba

NPN

SINGLE

NO

30 MHz

80 W

8 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC2563

Toshiba

NPN

SINGLE

NO

90 MHz

80 W

8 A

1

Other Transistors

55

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC5439(Q)

Toshiba

NPN

SINGLE

NO

30 W

8 A

1

Other Transistors

14

150 Cel

2SA1093

Toshiba

PNP

SINGLE

NO

90 MHz

80 W

8 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

2SA1264

Toshiba

PNP

SINGLE

NO

30 MHz

80 W

8 A

1

Other Transistors

55

140 Cel

Tin/Lead (Sn/Pb)

e0

2SB1078(K)

Renesas Electronics

PNP

DARLINGTON

NO

40 W

8 A

Other Transistors

1000

150 Cel

2SD2162L-AZ

Renesas Electronics

NPN

DARLINGTON

NO

25 W

8 A

Other Transistors

3000

150 Cel

2SC5250

Renesas Electronics

NPN

SINGLE

NO

50 W

8 A

1

Other Transistors

6

150 Cel

NTD565

Renesas Electronics

NPN

DARLINGTON

NO

100 W

8 A

Other Transistors

100

150 Cel

2SD2162K-AZ

Renesas Electronics

NPN

DARLINGTON

NO

25 W

8 A

Other Transistors

5000

150 Cel

2SD2162M-AZ

Renesas Electronics

NPN

DARLINGTON

NO

25 W

8 A

Other Transistors

2000

150 Cel

2SA1841K-T-AZ

Renesas Electronics

PNP

DARLINGTON

NO

1.8 W

8 A

Other Transistors

8000

150 Cel

2SA1841L-T-AZ

Renesas Electronics

PNP

DARLINGTON

NO

1.8 W

8 A

Other Transistors

4000

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.