.1 W Other Function Transistors 447

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code
2SK12	Toshiba	N-CHANNEL		NO		.1 W					Other Transistors	JUNCTION		150 Cel	Tin/Lead (Sn/Pb)		e0
2SC4915Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A		1		Other Transistors		100	125 Cel
2SC5108FT-Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	4000 MHz	.1 W	.03 A		1		Other Transistors		120	125 Cel
2SC6026CT-Y(TPL3)	Toshiba	NPN	SINGLE	YES	60 MHz	.1 W	.1 A		1		Other Transistors		120	150 Cel
MT3S03AU(TE85L)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.04 A		1		Other Transistors		80	125 Cel
SSM3J16CT(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
HN1C05FE-B(TPL3)	Toshiba	NPN		YES		.1 W	.4 A				Other Transistors		500	150 Cel
SSM3J16FS(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
MT6L58AE(TE85L,F)	Toshiba	NPN		YES	3000 MHz	.1 W	.04 A				Other Transistors		70	125 Cel
SSM3J16FS(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SC5317(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.02 A		1		Other Transistors		50	125 Cel	Tin/Lead (Sn/Pb)		e0
MT6C03AE(TE85L)	Toshiba	NPN		YES	3000 MHz	.1 W	.04 A				Other Transistors		80	125 Cel
2SC4915Y(TE85L)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A		1		Other Transistors		100	125 Cel
MT3S31T	Toshiba	NPN	SINGLE	YES	15000 MHz	.1 W	.024 A		1		Other Transistors		100	125 Cel	Tin/Lead (Sn/Pb)		e0
2SK48	Toshiba	N-CHANNEL		NO		.1 W					Other Transistors	JUNCTION		150 Cel	Tin/Lead (Sn/Pb)		e0
2SC5376-A(TE85L,F)	Toshiba	NPN	SINGLE	YES	80 MHz	.1 W	.4 A		1		Other Transistors		300	125 Cel
2SC4667-R(TE85L)	Toshiba	NPN	SINGLE	YES	200 MHz	.1 W	.2 A		1		Other Transistors		40	125 Cel
2SC5316(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.02 A		1		Other Transistors		50	125 Cel
MT6L62AE(TPL3,F)	Toshiba	NPN		YES	5000 MHz	.1 W	.04 A				Other Transistors		70	125 Cel
TTC4116FU(TE85L,F)	Toshiba	NPN	SINGLE	YES	80 MHz	.1 W	.15 A		1		Other Transistors		120	150 Cel
2SJ344(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.05 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.05 A
MT3S04AS(TE85L,F)	Toshiba	NPN	SINGLE	YES	2000 MHz	.1 W	.04 A		1		Other Transistors		80	125 Cel
2SC4667-O(TE85L)	Toshiba	NPN	SINGLE	YES	200 MHz	.1 W	.2 A		1		Other Transistors		70	125 Cel
MT6L62AE(TPL3)	Toshiba	NPN		YES	5000 MHz	.1 W	.04 A				Other Transistors		70	125 Cel
MT6L62AE(TE85L,F)	Toshiba	NPN		YES	5000 MHz	.1 W	.04 A				Other Transistors		70	125 Cel
2SC5376-B(TE85L,F)	Toshiba	NPN	SINGLE	YES	80 MHz	.1 W	.4 A		1		Other Transistors		500	125 Cel
2SC5108FT(TE85L)	Toshiba	NPN	SINGLE	YES	4000 MHz	.1 W	.03 A		1		Other Transistors		80	125 Cel
2SC5085O(TE85L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.1 W	.08 A		1		Other Transistors		80	125 Cel
2SC785	Toshiba	NPN	SINGLE	NO	500 MHz	.1 W	.02 A		1		Other Transistors		25	125 Cel	Tin/Lead (Sn/Pb)		e0
MT3S03AS(TE85L)	Toshiba	NPN	SINGLE		5000 MHz	.1 W	.04 A		1		Other Transistors		80	125 Cel
SSM3J15CT(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SK266	Toshiba	N-CHANNEL		NO		.1 W					Other Transistors	JUNCTION
2SC5261FT(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.015 A		1		Other Transistors		50	125 Cel
2SC5317FT(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.1 W	.02 A		1		Other Transistors		50	125 Cel
2SC5111-O(TE85L,F)	Toshiba	NPN	SINGLE	YES	3000 MHz	.1 W	.06 A		1		Other Transistors		80	125 Cel
2SC4251(TE85L)	Toshiba	NPN	SINGLE	YES	650 MHz	.1 W	.05 A		1		Other Transistors		40	125 Cel
2SC5096R(TE85L,F)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.015 A		1		Other Transistors		50	125 Cel
2SJ347(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.05 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.05 A
HN1A01FE-GR(TPL3)	Toshiba	PNP		YES	80 MHz	.1 W	.15 A				Other Transistors		200	150 Cel
SSM3J15FS(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SC4215R(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A		1		Other Transistors		40	125 Cel
2SC5233-B(TE85L,F)	Toshiba	NPN	SINGLE	YES	80 MHz	.1 W	.5 A		1		Other Transistors		.5	125 Cel
2SC5096O(TE85L,F)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.015 A		1		Other Transistors		50	125 Cel
2SK15	Toshiba	N-CHANNEL		NO		.1 W					Other Transistors	JUNCTION		150 Cel	Tin/Lead (Sn/Pb)		e0
2SC5108FT-O(TE85L,F)	Toshiba	NPN	SINGLE	YES	4000 MHz	.1 W	.03 A		1		Other Transistors		80	125 Cel
2SC5085Y(TE85L)	Toshiba	NPN	SINGLE	YES	5000 MHz	.1 W	.08 A		1		Other Transistors		120	125 Cel
MT6L58AE(TPL3)	Toshiba	NPN		YES	3000 MHz	.1 W	.04 A				Other Transistors		70	125 Cel
MT4S03AU(TE85L)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.04 A		1		Other Transistors		80	125 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.