.28 W Other Function Transistors 23

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

IRLML5103

Infineon Technologies

P-CHANNEL

SINGLE

YES

.28 W

ENHANCEMENT MODE

1

.54 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.54 A

1

C5T6539

Texas Instruments

NPN

SINGLE

YES

350 MHz

.28 W

.2 A

1

Other Transistors

250

150 Cel

C5T2484

Texas Instruments

NPN

SINGLE

YES

.28 W

.05 A

1

Other Transistors

250

150 Cel

C5T2945

Texas Instruments

PNP

SINGLE

YES

80 MHz

.28 W

.1 A

1

Other Transistors

40

150 Cel

C5T2432

Texas Instruments

NPN

SINGLE

YES

60 MHz

.28 W

.1 A

1

Other Transistors

50

150 Cel

C5T6540

Texas Instruments

NPN

SINGLE

YES

350 MHz

.28 W

.2 A

1

Other Transistors

100

150 Cel

C5T2944

Texas Instruments

PNP

SINGLE

YES

80 MHz

.28 W

.1 A

1

Other Transistors

80

150 Cel

C5T2946

Texas Instruments

PNP

SINGLE

YES

80 MHz

.28 W

.1 A

1

Other Transistors

30

150 Cel

NTZD3158PT1G

Onsemi

P-CHANNEL

YES

.28 W

ENHANCEMENT MODE

.43 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.43 A

1

e3

30

260

BF799-E6433

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

150 Cel

BFQ29P

Infineon Technologies

NPN

SINGLE

YES

4700 MHz

.28 W

.03 A

1

Other Transistors

50

150 Cel

BFQ81

Infineon Technologies

NPN

SINGLE

YES

.28 W

.03 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BF775A

Infineon Technologies

NPN

SINGLE

YES

4200 MHz

.28 W

.03 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

BFS17W-E6433

Infineon Technologies

NPN

SINGLE

YES

1000 MHz

.28 W

.025 A

1

Other Transistors

20

150 Cel

BFS17S-E6433

Infineon Technologies

NPN

YES

1000 MHz

.28 W

.025 A

Other Transistors

20

150 Cel

BF799W-E6433

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

BF799W-E6327

Infineon Technologies

NPN

SINGLE

YES

.28 W

.035 A

1

Other Transistors

35

1

260

BF599

Infineon Technologies

NPN

SINGLE

YES

.28 W

.025 A

1

Other Transistors

38

150 Cel

BFR93P

Infineon Technologies

NPN

SINGLE

YES

5000 MHz

.28 W

.05 A

1

Other Transistors

30

150 Cel

BFR92W-E6433

Infineon Technologies

NPN

SINGLE

YES

3500 MHz

.28 W

.03 A

1

Other Transistors

40

150 Cel

BFR92P-E6433

Infineon Technologies

NPN

SINGLE

YES

3500 MHz

.28 W

.045 A

1

Other Transistors

70

150 Cel

BFR35AP-E6327

Infineon Technologies

NPN

SINGLE

YES

3500 MHz

.28 W

.03 A

1

Other Transistors

40

150 Cel

1

260

BFR35AP-E6433

Infineon Technologies

NPN

SINGLE

YES

3500 MHz

.28 W

.03 A

1

Other Transistors

40

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.