.3 W Other Function Transistors 487

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
BC847B	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		200	150 Cel	Matte Tin (Sn)		1	e3
MMBT3906	Vishay Intertechnology	PNP	SINGLE	YES	250 MHz	.3 W	.2 A		1		Other Transistors		30	150 Cel	Matte Tin (Sn)			e3
BC847C	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		420	150 Cel	Matte Tin (Sn)		1	e3
MMBT2907A	Vishay Intertechnology	PNP	SINGLE	YES	200 MHz	.3 W	.6 A		1		Other Transistors		50	150 Cel	Matte Tin (Sn)			e3
BC846B	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		200	150 Cel	Matte Tin (Sn)		1	e3
BFT92W/A2,115	NXP Semiconductors	PNP	SINGLE	YES		.3 W	.025 A		1		Other Transistors		20	150 Cel
BF862/A2,215	NXP Semiconductors	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		150 Cel
2N4416/A	General Electric Solid State	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		200 Cel
BFR93AW,135	NXP Semiconductors	NPN	SINGLE	YES	4500 MHz	.3 W	.035 A		1		Other Transistors		40	150 Cel	TIN			e3	30	260
BC847A	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		110	150 Cel	Matte Tin (Sn)		1	e3
MMBT4403	Vishay Intertechnology	PNP	SINGLE	YES	200 MHz	.3 W	.6 A		1		Other Transistors		20	150 Cel	Matte Tin (Sn)			e3
2N3567	STMicroelectronics	NPN	SINGLE	NO	60 MHz	.3 W	.5 A		1		Other Transistors		40	125 Cel	Tin/Lead (Sn/Pb)			e0
12A01C-TB-E	Onsemi	PNP	SINGLE	YES		.3 W	.5 A		1		Other Transistors		300	150 Cel	Tin/Bismuth (Sn/Bi)		1	e6
30A01C-TB-E	Onsemi	PNP	SINGLE	YES		.3 W	.3 A		1		Other Transistors		200	150 Cel	Tin/Bismuth (Sn/Bi)		1	e6
MMBTA56	Vishay Intertechnology	PNP	SINGLE	YES	50 MHz	.3 W	.5 A		1		Other Transistors		100	150 Cel	Matte Tin (Sn)			e3
BFR520,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	150 Cel	TIN		1	e3	30	260
BFR93AW	Vishay Intertechnology	NPN	SINGLE	YES	4500 MHz	.3 W	.035 A		1		Other Transistors		40	150 Cel
BC848C	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		420	150 Cel	Matte Tin (Sn)		1	e3
BFR520/C,215	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	175 Cel
BFR92AW	Vishay Intertechnology	NPN	SINGLE	YES		.3 W	.025 A		1		Other Transistors		40	150 Cel
2N5432	Texas Instruments	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
BC849C	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		420	150 Cel	Matte Tin (Sn)		1	e3
BC264C	Texas Instruments	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
BC846A	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		110	150 Cel	Matte Tin (Sn)		1	e3
BC848A	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		110	150 Cel	Matte Tin (Sn)		1	e3
BFS17	Vishay Intertechnology	NPN	SINGLE	YES		.3 W	.025 A		1		Other Transistors		20	150 Cel	Matte Tin (Sn)			e3
BFS17W	Vishay Intertechnology	NPN	SINGLE	YES	1600 MHz	.3 W	.05 A		1		Other Transistors		25	150 Cel
SSM6L09FU(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.4 A			30	260
LSK189-SOT-23-3L	Linear Integrated Systems	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		150 Cel
LSK189-TO-92-3L	Linear Integrated Systems	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		150 Cel
BFS17A	Vishay Intertechnology	NPN	SINGLE	YES		.3 W	.025 A		1		Other Transistors		20	175 Cel	Matte Tin (Sn)			e3
BFS17A,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.025 A		1		Other Transistors		20	175 Cel	TIN		1	e3	30	260
MMBT2222A-G	Weitron Technology	NPN	SINGLE	YES	300 MHz	.3 W	.6 A		1		Other Transistors		40	150 Cel
MMBT4401-G	Weitron Technology	NPN	SINGLE	YES	250 MHz	.3 W	.6 A		1		Other Transistors		20	150 Cel
2SC2240GR	Forward International Electronics	NPN	SINGLE	NO		.3 W	.1 A		1		Other Transistors		200	150 Cel
BC848B	Vishay Intertechnology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		200	150 Cel	Matte Tin (Sn)		1	e3
BFR31,235	NXP Semiconductors	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
BFR93AR	Vishay Intertechnology	NPN	SINGLE	YES		.3 W	.035 A		1		Other Transistors		40	175 Cel	Matte Tin (Sn)			e3
BFS17W,135	NXP Semiconductors	NPN	SINGLE	YES	1600 MHz	.3 W	.05 A		1		Other Transistors		25	150 Cel	TIN			e3	30	260
MMBT5401-G	Weitron Technology	PNP	SINGLE	YES	100 MHz	.3 W	.5 A		1		Other Transistors		50	150 Cel
BC182AP	Zetex Plc	NPN	SINGLE	NO	150 MHz	.3 W	.1 A		1		Other Transistors			150 Cel	TIN LEAD			e0	10	235
BC848A-G	Weitron Technology	NPN	SINGLE	YES	100 MHz	.3 W	.1 A		1		Other Transistors		110	150 Cel
MPS2222A-G	Weitron Technology	NPN	SINGLE	NO	300 MHz	.3 W	.6 A		1		Other Transistors		40	150 Cel
BF245C	Texas Instruments	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel
2N4339-E3	Vishay Intertechnology	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		200 Cel	Matte Tin (Sn)		1	e3
2N5432-E3	Vishay Intertechnology	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel	MATTE TIN		1	e3	30	260
ACY32VI	Infineon Technologies	PNP	SINGLE	NO	1.5 MHz	.3 W	.2 A		1		Other Transistors			100 Cel	Tin/Lead (Sn/Pb)			e0
BF245B	Texas Instruments	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.