.31 W Other Function Transistors 45

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BC856B

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

e3

BC857B

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

e3

BC857C

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

e3

NX3008PBKW,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.31 W

ENHANCEMENT MODE

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.2 A

1

e3

30

260

BC857A

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

J201

Vishay Intertechnology

N-CHANNEL

NO

.31 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

BC858C

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

e3

BC856A

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

2N5486

Vishay Intertechnology

N-CHANNEL

NO

.31 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

MPS3393

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.5 A

1

Other Transistors

90

150 Cel

MPS3711

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.2 A

1

Other Transistors

180

150 Cel

MPS3707

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.2 A

1

Other Transistors

100

150 Cel

MPS3395

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.5 A

1

Other Transistors

150

150 Cel

MPS3709

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.2 A

1

Other Transistors

45

150 Cel

MPS3708

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.2 A

1

Other Transistors

45

150 Cel

MPS3394

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.5 A

1

Other Transistors

55

150 Cel

MPS3710

Texas Instruments

NPN

SINGLE

NO

100 MHz

.31 W

.2 A

1

Other Transistors

90

150 Cel

MPSA09

Texas Instruments

NPN

SINGLE

NO

30 MHz

.31 W

.05 A

1

Other Transistors

100

135 Cel

BCX71RK

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

500

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW61RA

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

170

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX70RJ

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX71RG

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BCX70RK

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX71RJ

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

350

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW60RC

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW61RB

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

250

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW60RB

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX70RG

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW60RD

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX70RH

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW60RA

STMicroelectronics

NPN

SINGLE

YES

250 MHz

.31 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX71RH

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

250

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW61RC

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

350

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW61RD

STMicroelectronics

PNP

SINGLE

YES

180 MHz

.31 W

.2 A

1

Other Transistors

500

150 Cel

Tin/Lead (Sn/Pb)

e0

BS850

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.31 W

ENHANCEMENT MODE

1

.15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.15 A

IMBT2222

Diodes Incorporated

NPN

SINGLE

YES

250 MHz

.31 W

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBT4402

Diodes Incorporated

PNP

SINGLE

YES

150 MHz

.31 W

.6 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBTA56

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.31 W

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBT3904

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.31 W

.1 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBT2907

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.31 W

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBT3906

Diodes Incorporated

PNP

SINGLE

YES

250 MHz

.31 W

.1 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

BS817

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.31 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

IMBT3905

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.31 W

.1 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBTA55

Diodes Incorporated

PNP

SINGLE

YES

100 MHz

.31 W

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBT3903

Diodes Incorporated

NPN

SINGLE

YES

250 MHz

.31 W

.1 A

1

Other Transistors

50

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.