.35 W Other Function Transistors 138

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

MPS2925

Texas Instruments

NPN

SINGLE

NO

100 MHz

.35 W

.5 A

1

Other Transistors

235

150 Cel

BC238A

Texas Instruments

NPN

SINGLE

NO

150 MHz

.35 W

.1 A

1

Other Transistors

120

150 Cel

MCH4014

Onsemi

NPN

SINGLE

YES

8000 MHz

.35 W

.03 A

1

Other Transistors

60

150 Cel

MCH3007TL

Onsemi

NPN

SINGLE

YES

6000 MHz

.35 W

.03 A

1

Other Transistors

60

150 Cel

MCH4016-TL

Onsemi

NPN

SINGLE

YES

8000 MHz

.35 W

.03 A

1

Other Transistors

60

150 Cel

MPSH10DIE

Onsemi

NPN

SINGLE

650 MHz

.35 W

.04 A

1

Other Transistors

60

150 Cel

CPH5901F

Onsemi

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

6285-2N5087

Onsemi

PNP

SINGLE

NO

40 MHz

.35 W

.1 A

1

Other Transistors

250

150 Cel

CPH5901G

Onsemi

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

BCW67R

STMicroelectronics

PNP

SINGLE

YES

100 MHz

.35 W

.8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

2N4126T/R2

NXP Semiconductors

PNP

SINGLE

NO

.35 W

.2 A

1

Other Transistors

120

150 Cel

PMBT3906YS/DG,115

NXP Semiconductors

PNP

YES

250 MHz

.35 W

.2 A

Other Transistors

100

150 Cel

BF939

Infineon Technologies

PNP

SINGLE

NO

750 MHz

.35 W

.02 A

1

Other Transistors

140 Cel

Tin/Lead (Sn/Pb)

e0

BC415

Infineon Technologies

PNP

SINGLE

NO

.35 W

.1 A

1

Other Transistors

120

150 Cel

BC416

Infineon Technologies

PNP

SINGLE

NO

.35 W

.1 A

1

Other Transistors

120

150 Cel

BF506

Infineon Technologies

PNP

SINGLE

NO

.35 W

.05 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

BC413

Infineon Technologies

NPN

SINGLE

NO

.35 W

.1 A

1

Other Transistors

180

150 Cel

BC414

Infineon Technologies

NPN

SINGLE

NO

.35 W

.1 A

1

Other Transistors

180

150 Cel

BFR34A

Infineon Technologies

NPN

SINGLE

YES

.35 W

.03 A

1

Other Transistors

150 Cel

BC238-B

Infineon Technologies

NPN

SINGLE

NO

150 MHz

.35 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

IMBT4401

Diodes Incorporated

NPN

SINGLE

YES

250 MHz

.35 W

.31 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

AF1333PUL

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.55 A

30

260

IMBT4400

Diodes Incorporated

NPN

SINGLE

YES

200 MHz

.35 W

.31 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

AF1333PU

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.55 A

e0

AF1333PUA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.55 A

e0

AF1333PULA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.55 A

30

260

IMBT4403

Diodes Incorporated

PNP

SINGLE

YES

200 MHz

.35 W

.31 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBT123S

Diodes Incorporated

NPN

SINGLE

YES

100 MHz

.35 W

1 A

1

Other Transistors

150

150 Cel

Tin/Lead (Sn/Pb)

e0

2N3904(TE2,T)

Toshiba

NPN

SINGLE

NO

300 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

2N3906(TE2,T)

Toshiba

PNP

SINGLE

NO

250 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

2SB810J

Renesas Electronics

PNP

SINGLE

NO

50 MHz

.35 W

.7 A

1

Other Transistors

135

150 Cel

2SB810E

Renesas Electronics

PNP

SINGLE

NO

50 MHz

.35 W

.7 A

1

Other Transistors

250

150 Cel

2SB810M

Renesas Electronics

PNP

SINGLE

NO

50 MHz

.35 W

.7 A

1

Other Transistors

110

150 Cel

2SC3128

Renesas Electronics

NPN

SINGLE

NO

4500 MHz

.35 W

.05 A

1

Other Transistors

30

2SB810H

Renesas Electronics

PNP

SINGLE

NO

50 MHz

.35 W

.7 A

1

Other Transistors

170

150 Cel

2SB810F

Renesas Electronics

PNP

SINGLE

NO

50 MHz

.35 W

.7 A

1

Other Transistors

200

150 Cel

MMBC1622D8

Samsung

NPN

SINGLE

YES

100 MHz

.35 W

.1 A

1

Other Transistors

400

150 Cel

Tin/Lead (Sn/Pb)

e0

MPSH20

Samsung

NPN

SINGLE

NO

400 MHz

.35 W

.1 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1009F4

Samsung

NPN

SINGLE

YES

150 MHz

.35 W

.05 A

1

Other Transistors

90

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1009F2

Samsung

NPN

SINGLE

YES

150 MHz

.35 W

.05 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1009F5

Samsung

NPN

SINGLE

YES

150 MHz

.35 W

.05 A

1

Other Transistors

135

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBTH17

Samsung

NPN

SINGLE

YES

800 MHz

.35 W

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.