.36 W Other Function Transistors 130

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2N3826

Texas Instruments

NPN

SINGLE

NO

200 MHz

.36 W

.03 A

1

Other Transistors

40

150 Cel

2N3014

Texas Instruments

NPN

SINGLE

NO

350 MHz

.36 W

.2 A

1

Other Transistors

30

175 Cel

2N3013

Texas Instruments

NPN

SINGLE

NO

350 MHz

.36 W

.2 A

1

Other Transistors

30

175 Cel

2N3009

Texas Instruments

NPN

SINGLE

NO

350 MHz

.36 W

.2 A

1

Other Transistors

30

175 Cel

BFR17

STMicroelectronics

NPN

SINGLE

NO

100 MHz

.36 W

.05 A

1

Other Transistors

450

175 Cel

Tin/Lead (Sn/Pb)

e0

ESM269

STMicroelectronics

NPN

SINGLE

NO

.36 W

.1 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BCW67RC

STMicroelectronics

PNP

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

350

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW65RB

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

250

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW67RB

STMicroelectronics

PNP

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

260

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW67RA

STMicroelectronics

PNP

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

170

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW66RH

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW66RG

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

250

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW66RF

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

160

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW65RC

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

350

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW65RA

STMicroelectronics

NPN

SINGLE

YES

100 MHz

.36 W

.8 A

1

Other Transistors

160

150 Cel

Tin/Lead (Sn/Pb)

e0

BFG480W,135

NXP Semiconductors

NPN

SINGLE

YES

.36 W

.25 A

1

Other Transistors

40

150 Cel

TIN

e3

30

260

PBR941B,215

NXP Semiconductors

NPN

SINGLE

YES

7000 MHz

.36 W

.05 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

BFN24-E6433

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

40

150 Cel

BF256

Infineon Technologies

N-CHANNEL

NO

.36 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

BFN26-E6327

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

30

150 Cel

1

260

BFN26-E6433

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

30

150 Cel

1

260

BFN24-E6327

Infineon Technologies

NPN

SINGLE

YES

.36 W

.2 A

1

Other Transistors

40

150 Cel

1

260

BFR750L3RH-E6327

Infineon Technologies

NPN

SINGLE

YES

.36 W

.09 A

1

Other Transistors

160

150 Cel

1

260

SMBTA42-E6433

Infineon Technologies

NPN

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

1

260

BSS83PE6433

Infineon Technologies

P-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.33 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.33 A

SMBTA92-E6433

Infineon Technologies

PNP

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

1

260

MMBTA92-E6327

Infineon Technologies

PNP

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

SMBT6427

Infineon Technologies

NPN

DARLINGTON

YES

130 MHz

.36 W

.5 A

Other Transistors

20000

Tin/Lead (Sn/Pb)

e0

SMBTA43

Infineon Technologies

NPN

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBTA92-E6433

Infineon Technologies

PNP

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

SMBTA93

Infineon Technologies

PNP

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

PN4303

Renesas Electronics

N-CHANNEL

NO

.36 W

Other Transistors

JUNCTION

Tin/Lead (Sn/Pb)

e0

PN4304

Renesas Electronics

N-CHANNEL

NO

.36 W

Other Transistors

JUNCTION

135 Cel

PN4093

Renesas Electronics

N-CHANNEL

NO

.36 W

Other Transistors

JUNCTION

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.