.4 W Other Function Transistors 144

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code
MCH4021-TL-E	Onsemi	NPN	SINGLE	YES	13000 MHz	.4 W	.15 A		1		Other Transistors		60	150 Cel	Tin/Bismuth (Sn/Bi)		1	e6
2SC3114	Onsemi	NPN	SINGLE	NO		.4 W	.15 A		1		Other Transistors		100	150 Cel
2SC3114R	Onsemi	NPN	SINGLE	NO		.4 W	.15 A		1		Other Transistors		100	150 Cel
12A02SP	Onsemi	PNP	SINGLE	NO		.4 W	1 A		1		Other Transistors		300	150 Cel
2SC3114U	Onsemi	NPN	SINGLE	NO		.4 W	.15 A		1		Other Transistors		280	150 Cel
15GN03NA	Onsemi	NPN	SINGLE	NO	1000 MHz	.4 W	.07 A		1		Other Transistors		100	150 Cel
2SC3383R	Onsemi	NPN	SINGLE	NO		.4 W	.2 A		1		Other Transistors		100	150 Cel
30C01SP	Onsemi	NPN	SINGLE	NO		.4 W	.4 A		1		Other Transistors		300	150 Cel
SCH2202	Onsemi	NPN		YES		.4 W	.6 A				Other Transistors		300	150 Cel
5LP01N	Onsemi	P-CHANNEL	SINGLE	NO		.4 W		ENHANCEMENT MODE	1	.07 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.07 A
55GN01NA	Onsemi	NPN	SINGLE	NO	3500 MHz	.4 W	.07 A		1		Other Transistors		100	150 Cel
2SA1246U	Onsemi	PNP	SINGLE	NO		.4 W	.15 A		1		Other Transistors		280	150 Cel
2SA1246R	Onsemi	PNP	SINGLE	NO		.4 W	.15 A		1		Other Transistors		100	150 Cel
30A02SP	Onsemi	PNP	SINGLE	NO		.4 W	.7 A		1		Other Transistors		200	150 Cel
2SA1392	Onsemi	PNP	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		100	150 Cel
30A01SP	Onsemi	PNP	SINGLE	NO		.4 W	.3 A		1		Other Transistors		200	150 Cel
2SA1392S	Onsemi	PNP	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		140	150 Cel
2SA1392T	Onsemi	PNP	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		200	150 Cel
2SA1392R	Onsemi	PNP	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		100	150 Cel
2SA1246	Onsemi	PNP	SINGLE	NO		.4 W	.15 A		1		Other Transistors		100	150 Cel
2SA1392U	Onsemi	PNP	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		280	150 Cel
5HP01N	Onsemi	P-CHANNEL	SINGLE	NO		.4 W		ENHANCEMENT MODE	1	.07 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.07 A
BFG10,215	NXP Semiconductors	NPN	SINGLE	YES		.4 W	.25 A		1		Other Transistors		25	175 Cel	Matte Tin (Sn)			e3
J111,126	NXP Semiconductors	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION		150 Cel
J108,126	NXP Semiconductors	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION		150 Cel
J110,126	NXP Semiconductors	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION		150 Cel
BSY62A	Infineon Technologies	NPN	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		60	175 Cel	Tin/Lead (Sn/Pb)			e0
BFQ645	Infineon Technologies	NPN	SINGLE	YES		.4 W	.04 A		1		Other Transistors		50	175 Cel	Tin/Lead (Sn/Pb)			e0
BSY17	Infineon Technologies	NPN	SINGLE	NO	280 MHz	.4 W	.2 A		1		Other Transistors		60	175 Cel	Tin/Lead (Sn/Pb)			e0
BSY62B	Infineon Technologies	NPN	SINGLE	NO	200 MHz	.4 W	.2 A		1		Other Transistors		300	175 Cel	Tin/Lead (Sn/Pb)			e0
BCY77	Infineon Technologies	PNP	SINGLE	NO	180 MHz	.4 W	.2 A		1		Other Transistors		120	175 Cel	Tin/Lead (Sn/Pb)			e0
TEC9011	Toshiba	NPN	SINGLE	NO	100 MHz	.4 W	.05 A		1		Other Transistors		39		Tin/Lead (Sn/Pb)			e0
2SC373GTM	Toshiba	NPN	SINGLE	NO	200 MHz	.4 W	.15 A		1		Other Transistors		200		Tin/Lead (Sn/Pb)			e0
2SC980GTM	Toshiba	NPN	SINGLE	NO	250 MHz	.4 W	.1 A		1		Other Transistors		70		Tin/Lead (Sn/Pb)			e0
2SC1815-O(T)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		70	125 Cel
2SA495GTM	Toshiba	PNP	SINGLE	NO	200 MHz	.4 W	.15 A		1		Other Transistors		70	125 Cel	Tin/Lead (Sn/Pb)			e0
2SC980ATM	Toshiba	NPN	SINGLE	NO	250 MHz	.4 W	.1 A		1		Other Transistors		120		Tin/Lead (Sn/Pb)			e0
2SC980TM	Toshiba	NPN	SINGLE	NO	250 MHz	.4 W	.1 A		1		Other Transistors		70		Tin/Lead (Sn/Pb)			e0
2SC1815-BL(F)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		350	125 Cel
2SC1815-Y(F,T)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		120	125 Cel
2SC1000GTM	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		200		Tin/Lead (Sn/Pb)			e0
2SC3378	Toshiba	NPN	SINGLE	NO	100 MHz	.4 W	2 A		1		Other Transistors		200	150 Cel	Tin/Lead (Sn/Pb)			e0
2SC1815-O(F,T)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		70	125 Cel
2SC1815-GR(T)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		200	125 Cel
2SC980AGTM	Toshiba	NPN	SINGLE	NO	250 MHz	.4 W	.1 A		1		Other Transistors		140		Tin/Lead (Sn/Pb)			e0
TED1602	Toshiba	PNP	SINGLE	NO	150 MHz	.4 W	.15 A		1		Other Transistors		70		Tin/Lead (Sn/Pb)			e0
2SC1815-O(F)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors		70	125 Cel
2SC372GTM	Toshiba	NPN	SINGLE	NO	200 MHz	.4 W	.15 A		1		Other Transistors		70		Tin/Lead (Sn/Pb)			e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.