1.8 W Other Function Transistors 62

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Peak Reflow Temperature (C)
BSP315P-E6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.8 W		ENHANCEMENT MODE	1	1.17 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.17 A	1		255
BSP317P-E6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.8 W		ENHANCEMENT MODE	1	.43 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.43 A	1		255
BSP316P-E6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.8 W		ENHANCEMENT MODE	1	.68 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.68 A	1		235
2N930A	Texas Instruments	NPN	SINGLE	NO	45 MHz	1.8 W	.03 A		1		Other Transistors		100	175 Cel
2N3301	Texas Instruments	NPN	SINGLE	NO	250 MHz	1.8 W	.5 A		1		Other Transistors		40	175 Cel
2N4978	Texas Instruments	N-CHANNEL		NO		1.8 W					Other Transistors	JUNCTION		200 Cel
2N929A	Texas Instruments	NPN	SINGLE	NO	45 MHz	1.8 W	.03 A		1		Other Transistors		100	175 Cel
BFX66	Texas Instruments	NPN	DARLINGTON	NO		1.8 W	.2 A				Other Transistors		1600	200 Cel
2N4977	Texas Instruments	N-CHANNEL		NO		1.8 W					Other Transistors	JUNCTION		200 Cel
BFX67	Texas Instruments	NPN	DARLINGTON	NO		1.8 W	.3 A				Other Transistors		7000	200 Cel
2N3302	Texas Instruments	NPN	SINGLE	NO	250 MHz	1.8 W	.5 A		1		Other Transistors		100	175 Cel
2N4979	Texas Instruments	N-CHANNEL		NO		1.8 W					Other Transistors	JUNCTION		200 Cel
BSP92P-E6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.8 W		ENHANCEMENT MODE	1	.26 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.26 A	1		255
BF847	Infineon Technologies	PNP	SINGLE	NO	90 MHz	1.8 W	.1 A		1		Other Transistors		25	140 Cel	Tin/Lead (Sn/Pb)			e0
BSP613P-E6327	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.8 W		ENHANCEMENT MODE	1	2.9 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.9 A
BF849	Infineon Technologies	PNP	SINGLE	NO	90 MHz	1.8 W	5 A		1		Other Transistors		25	175 Cel	Tin/Lead (Sn/Pb)			e0
BF848	Infineon Technologies	PNP	SINGLE	NO	90 MHz	1.8 W	.1 A		1		Other Transistors		25	140 Cel	Tin/Lead (Sn/Pb)			e0
MT3S22P(TE12L)	Toshiba	NPN	SINGLE	YES	6500 MHz	1.8 W	.08 A		1		Other Transistors		100	150 Cel
2SC6140(TP)	Toshiba	NPN	SINGLE	NO		1.8 W	1.5 A		1		Other Transistors		140	150 Cel
MT3S21P(TE12L)	Toshiba	NPN	SINGLE	YES	7000 MHz	1.8 W	.08 A		1		Other Transistors		100	150 Cel
MT3S21P(TE12L,F)	Toshiba	NPN	SINGLE	YES	7000 MHz	1.8 W	.08 A		1		Other Transistors		100	150 Cel
MT3S22P(TE12L,F)	Toshiba	NPN	SINGLE	YES	6500 MHz	1.8 W	.08 A		1		Other Transistors		100	150 Cel
2SC6140(TP,F)	Toshiba	NPN	SINGLE	NO		1.8 W	1.5 A		1		Other Transistors		140	150 Cel
2SC4810K-T-AZ	Renesas Electronics	NPN	DARLINGTON	NO		1.8 W	5 A				Other Transistors		8000	150 Cel
2SC4813-T-AZ	Renesas Electronics	NPN	SINGLE	NO		1.8 W	7.5 A		1		Other Transistors		450	150 Cel
2SC4703SH-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		50	150 Cel
2SC4703SE-T1	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		125	150 Cel
2SC5338SH-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		50	150 Cel					260
2SC4703SH-T1	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		50	150 Cel
2SC5338SE-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		125	150 Cel					260
2SC4703SE-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		125	150 Cel
2SC4703SH-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		50	150 Cel
2SC5338SF-T1	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		80	150 Cel
2SC4810M-T-AZ	Renesas Electronics	NPN	DARLINGTON	NO		1.8 W	5 A				Other Transistors		2000	150 Cel
2SC4703SF-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		80	150 Cel
2SC4815L(0)-T-AZ	Renesas Electronics	NPN	SINGLE	NO		1.8 W	5 A		1		Other Transistors		150	150 Cel
2SC5338SE-T1	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		125	150 Cel
2SC4703SF-T1	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		80	150 Cel
2SC5338SF-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		80	150 Cel					260
2SC4703SE-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		125	150 Cel
2SC5338SH-T1	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		50	150 Cel
2SC4815M-T-AZ	Renesas Electronics	NPN	SINGLE	NO		1.8 W	5 A		1		Other Transistors		100	150 Cel
2SC5338SH-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		50	150 Cel					260
2SC5338SF-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		80	150 Cel					260
2SC4815M(0)-T-AZ	Renesas Electronics	NPN	SINGLE	NO		1.8 W	5 A		1		Other Transistors		100	150 Cel
2SC4703SF-AZ	Renesas Electronics	NPN	SINGLE	YES		1.8 W	.15 A		1		Other Transistors		80	150 Cel
2SC4815L-T-AZ	Renesas Electronics	NPN	SINGLE	NO		1.8 W	5 A		1		Other Transistors		150	150 Cel
2SC4810L-T-AZ	Renesas Electronics	NPN	DARLINGTON	NO		1.8 W	5 A				Other Transistors		4000	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.