2.1 W Other Function Transistors 37

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
PBSS5630PA,115	NXP Semiconductors	PNP	SINGLE	YES	50 MHz	2.1 W	6 A		1		Other Transistors		110	150 Cel	TIN		1	e3	30	260
PBSS9410PA,115	NXP Semiconductors	PNP	SINGLE	YES	70 MHz	2.1 W	2.7 A		1		Other Transistors		15	150 Cel	TIN		1	e3	30	260
PBSS5620PA,115	NXP Semiconductors	PNP	SINGLE	YES	50 MHz	2.1 W	6 A		1		Other Transistors		110	150 Cel	TIN		1	e3	30	260
PBSS5330PA,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	2.1 W	3 A		1		Other Transistors		175	150 Cel	TIN		1	e3	30	260
PHE13003A,412	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
PBSS5612PA,115	NXP Semiconductors	PNP	SINGLE	YES	40 MHz	2.1 W	6 A		1		Other Transistors		130	150 Cel	TIN		1	e3	30	260
PBSS8510PA,115	NXP Semiconductors	NPN	SINGLE	YES	95 MHz	2.1 W	5.2 A		1		Other Transistors		30	150 Cel	TIN		1	e3	30	260
PHE13003A,126	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
BUJ100LR,412	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
BUJ100LR,126	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
PHE13003C,126	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1.5 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
PHD13003C,412	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1.5 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
PHD13003C,126	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1.5 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
PHE13003C,412	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1.5 A		1		Other Transistors		5	150 Cel	TIN			e3	30	260
PBSS5560PA,115	NXP Semiconductors	PNP	SINGLE	YES	55 MHz	2.1 W	5 A		1		Other Transistors		90	150 Cel	TIN		1	e3	30	260
PBSS4560PA,115	NXP Semiconductors	NPN	SINGLE	YES	90 MHz	2.1 W	6 A		1		Other Transistors		70	150 Cel	TIN		1	e3	30	260
PBSS4330PA,115	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	2.1 W	3 A		1		Other Transistors		270	150 Cel	TIN		1	e3	30	260
PBSS4620PA,115	NXP Semiconductors	NPN	SINGLE	YES	50 MHz	2.1 W	6 A		1		Other Transistors		200	150 Cel	TIN		1	e3	30	260
PBSS4580PA,115	NXP Semiconductors	NPN	SINGLE	YES	95 MHz	2.1 W	5.6 A		1		Other Transistors		45	150 Cel	TIN		1	e3	30	260
PBSS4612PA,115	NXP Semiconductors	NPN	SINGLE	YES	50 MHz	2.1 W	6 A		1		Other Transistors		200	150 Cel	TIN		1	e3	30	260
PBSS304PX/DG,135	NXP Semiconductors	PNP	SINGLE	YES		2.1 W	4.2 A		1		Other Transistors		60	150 Cel
AF4512CSLA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A				260
AF4512CS	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5.2 A		e0
AF4502CS	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		8.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	8.5 A		e0
AF4502CSLA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		8.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		8.5 A				260
AF4953PSL	Diodes Incorporated	P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A				260
AF4953PSA	Diodes Incorporated	P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5.2 A		e0
AF8958CSL	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A				260
AF4953PSLA	Diodes Incorporated	P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A				260
AF4512CSL	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A				260
AF4502CSL	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		8.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		8.5 A				260
AF8958CSLA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A				260
AF4512CSA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5.2 A		e0
AF4502CSA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		8.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	8.5 A		e0
AF4953PS	Diodes Incorporated	P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5.2 A		e0
AF8958CSA	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5.2 A		e0
AF8958CS	Diodes Incorporated	N-CHANNEL AND P-CHANNEL		YES		2.1 W		ENHANCEMENT MODE		5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5.2 A		e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.