100 MHz Other Function Transistors 419

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SC780AGTM

Toshiba

NPN

SINGLE

NO

100 MHz

.4 W

.03 A

1

Other Transistors

70

Tin/Lead (Sn/Pb)

e0

2SC2270

Toshiba

NPN

SINGLE

NO

100 MHz

10 W

5 A

1

Other Transistors

140

150 Cel

Tin/Lead (Sn/Pb)

e0

TBC328

Toshiba

PNP

SINGLE

NO

100 MHz

.625 W

.5 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

S1839

Toshiba

PNP

SINGLE

NO

100 MHz

.625 W

.3 A

1

Other Transistors

70

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC3803-O(TE12L,F)

Toshiba

NPN

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

70

150 Cel

2SC3803-Y(TE12L)

Toshiba

NPN

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

120

150 Cel

S1955

Toshiba

PNP

SINGLE

NO

100 MHz

1.5 W

1.5 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC780ATM

Toshiba

NPN

SINGLE

NO

100 MHz

.4 W

.03 A

1

Other Transistors

70

Tin/Lead (Sn/Pb)

e0

2SC496

Toshiba

NPN

SINGLE

NO

100 MHz

5 W

.8 A

1

Other Transistors

40

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA429TM

Toshiba

PNP

SINGLE

NO

100 MHz

.4 W

.03 A

1

Other Transistors

70

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA1335

Toshiba

PNP

SINGLE

NO

100 MHz

.2 W

.1 A

1

Other Transistors

200

Tin/Lead (Sn/Pb)

e0

2SA1483Y(TE12L,F)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

120

150 Cel

2SA1158

Toshiba

PNP

SINGLE

NO

100 MHz

.4 W

.1 A

1

Other Transistors

120

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA1325

Toshiba

PNP

SINGLE

YES

100 MHz

.15 W

.1 A

1

Other Transistors

200

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA1483O(TE12L,F)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

70

150 Cel

2SA1306A

Toshiba

PNP

SINGLE

NO

100 MHz

20 W

1.5 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

2SA1483Y(TE12L)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

120

150 Cel

2SA1483R(TE12L,F)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

40

150 Cel

2SA1483O(TE12L)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

70

150 Cel

2SA1483R(TE12L)

Toshiba

PNP

SINGLE

YES

100 MHz

1 W

.2 A

1

Other Transistors

40

150 Cel

2SA733-A

Renesas Electronics

PNP

SINGLE

NO

100 MHz

.25 W

.1 A

1

Other Transistors

90

125 Cel

TIN SILVER COPPER

e1

10

260

2SB1301ZQ

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

3 A

1

Other Transistors

200

150 Cel

2SB1117U

Renesas Electronics

PNP

SINGLE

NO

100 MHz

1 W

3 A

1

Other Transistors

300

150 Cel

2SC458KB

Renesas Electronics

NPN

SINGLE

NO

100 MHz

.2 W

.1 A

1

Other Transistors

200

125 Cel

2SB1301ZP

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

3 A

1

Other Transistors

300

150 Cel

2SC458KD

Renesas Electronics

NPN

SINGLE

NO

100 MHz

.2 W

.1 A

1

Other Transistors

500

125 Cel

2SB1117K

Renesas Electronics

PNP

SINGLE

NO

100 MHz

1 W

3 A

1

Other Transistors

200

150 Cel

2SB1301ZR

Renesas Electronics

PNP

SINGLE

YES

100 MHz

2 W

3 A

1

Other Transistors

135

150 Cel

2SB1117L

Renesas Electronics

PNP

SINGLE

NO

100 MHz

1 W

3 A

1

Other Transistors

135

150 Cel

2SA1152

Renesas Electronics

PNP

SINGLE

NO

100 MHz

.6 W

.3 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1622D8

Samsung

NPN

SINGLE

YES

100 MHz

.35 W

.1 A

1

Other Transistors

400

150 Cel

Tin/Lead (Sn/Pb)

e0

MPS8097

Samsung

NPN

SINGLE

NO

100 MHz

.625 W

.2 A

1

Other Transistors

250

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1622D6

Samsung

NPN

SINGLE

YES

100 MHz

.225 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1622D7

Samsung

NPN

SINGLE

YES

100 MHz

.225 W

.1 A

1

Other Transistors

300

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBT6429

Samsung

NPN

SINGLE

YES

100 MHz

.225 W

.2 A

1

Other Transistors

500

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.