10000 MHz Other Function Transistors 29

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Moisture Sensitivity Level (MSL)	JESD-609 Code	Peak Reflow Temperature (C)
BFR380TE6327	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.38 W	.08 A	1	Other Transistors	60	150 Cel				260
BFR380T-E6433	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.38 W	.08 A	1	Other Transistors	60	150 Cel
BFR360TE6327	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.21 W	.035 A	1	Other Transistors	60	150 Cel		1		260
BFR340L3-E6327	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.06 W	.01 A	1	Other Transistors	60	150 Cel		1		260
BFR360T-E6433	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.21 W	.035 A	1	Other Transistors	60	150 Cel
MT3S19(TE85L)	Toshiba	NPN	SINGLE	YES	10000 MHz	.8 W	.08 A	1	Other Transistors	100	150 Cel
MT3S07U(TE85L)	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.025 A	1	Other Transistors	70	125 Cel
MT3S07S(TE85L)	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.015 A	1	Other Transistors	70	125 Cel
MT6P07T(TE85L)	Toshiba	NPN		YES	10000 MHz	.2 W	.025 A		Other Transistors	70	125 Cel
MT3S07T(TE85L)	Toshiba	NPN	SINGLE	YES	10000 MHz	.1 W	.025 A	1	Other Transistors	70	125 Cel
2SC5180-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
NE687M33-T3-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel
NE68633	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
HTT1213S	Renesas Electronics	NPN		YES	10000 MHz	.22 W	.05 A		Other Transistors	100	150 Cel
2SC5185-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel
2SC5737	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel
NE68618-T1	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
UPA861TD-A	Renesas Electronics	NPN		YES	10000 MHz	.105 W	.035 A		Other Transistors	50	150 Cel
NE68619	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0
UPA826TC	Renesas Electronics	NPN		YES	10000 MHz	.23 W	.03 A		Other Transistors	75	150 Cel
2SC5180-T1-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.03 W	.01 A	1	Other Transistors	70	150 Cel
UPA861TD-T3-A	Renesas Electronics	NPN		YES	10000 MHz	.105 W	.035 A		Other Transistors	50	150 Cel
UPA860TD-A	Renesas Electronics	NPN		YES	10000 MHz	.21 W	.035 A		Other Transistors	50	150 Cel
NE687M33-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel
2SC5185-T1-A	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel
2SC5737-T1	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel
UPA826TC-T1	Renesas Electronics	NPN		YES	10000 MHz	.23 W	.03 A		Other Transistors	75	150 Cel
UPA860TD-T3-A	Renesas Electronics	NPN		YES	10000 MHz	.21 W	.035 A		Other Transistors	50	150 Cel
NE68718	Renesas Electronics	NPN	SINGLE	YES	10000 MHz	.09 W	.03 A	1	Other Transistors	70	150 Cel	Tin/Lead (Sn/Pb)		e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.