120 MHz Other Function Transistors 132

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SA1249T	Onsemi	PNP	SINGLE	NO	120 MHz	10 W	1.5 A	1	Other Transistors	200	150 Cel
2SA1507	Onsemi	PNP	SINGLE	NO	120 MHz	10 W	1.5 A	1	Other Transistors	100	140 Cel
2SA1249S	Onsemi	PNP	SINGLE	NO	120 MHz	10 W	1.5 A	1	Other Transistors	140	150 Cel	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SA1768T	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	.7 A	1	Other Transistors	200	150 Cel
2SA1507R	Onsemi	PNP	SINGLE	NO	120 MHz	10 W	1.5 A	1	Other Transistors	100	140 Cel
2SA1770T	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	1.5 A	1	Other Transistors	200	150 Cel
2SA1249R	Onsemi	PNP	SINGLE	NO	120 MHz	10 W	1.5 A	1	Other Transistors	100	150 Cel
2SA1770	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	1.5 A	1	Other Transistors	100	150 Cel
2SA1770S	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	1.5 A	1	Other Transistors	140	150 Cel
2SA1319	Onsemi	PNP	SINGLE	NO	120 MHz	.7 W	.7 A	1	Other Transistors	100	150 Cel
2SA1770R	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	1.5 A	1	Other Transistors	100	150 Cel
2SA1768S	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	.7 A	1	Other Transistors	140	150 Cel
2SA1417	Onsemi	PNP	SINGLE	YES	120 MHz	.5 W	2 A	1	Other Transistors	100	150 Cel
2SA1768	Onsemi	PNP	SINGLE	NO	120 MHz	1 W	.7 A	1	Other Transistors	100	150 Cel
2SA1417R	Onsemi	PNP	SINGLE	YES	120 MHz	.5 W	2 A	1	Other Transistors	100	150 Cel
2SA1417S	Onsemi	PNP	SINGLE	YES	120 MHz	.5 W	2 A	1	Other Transistors	140	150 Cel
PBSS4260QAZ	NXP Semiconductors	NPN	SINGLE	YES	120 MHz	1 W	2 A	1	Other Transistors	40	150 Cel
PBSS4160QAZ	NXP Semiconductors	NPN	SINGLE	YES	120 MHz	1 W	1 A	1	Other Transistors	85	150 Cel
PBSS5230QAZ	NXP Semiconductors	PNP	SINGLE	YES	120 MHz	1 W	2 A	1	Other Transistors	60	150 Cel
PBSS5130QAZ	NXP Semiconductors	PNP	SINGLE	YES	120 MHz	1 W	1 A	1	Other Transistors	130	150 Cel
PBSS4160QAX	NXP Semiconductors	NPN	SINGLE	YES	120 MHz	1 W	1 A	1	Other Transistors	85	150 Cel
TED1702	Toshiba	NPN	SINGLE	NO	120 MHz	.6 W	.8 A	1	Other Transistors	106		Tin/Lead (Sn/Pb)	e0
S1808	Toshiba	PNP	SINGLE	NO	120 MHz	.625 W	.8 A	1	Other Transistors	100		Tin/Lead (Sn/Pb)	e0
TED1802	Toshiba	PNP	SINGLE	NO	120 MHz	.6 W	.8 A	1	Other Transistors	106		Tin/Lead (Sn/Pb)	e0
2SC2824	Toshiba	NPN	SINGLE	NO	120 MHz	1 W	1 A	1	Other Transistors	80	150 Cel	Tin/Lead (Sn/Pb)	e0
S1807	Toshiba	NPN	SINGLE	NO	120 MHz	.625 W	.8 A	1	Other Transistors	100		Tin/Lead (Sn/Pb)	e0
2SA1184	Toshiba	PNP	SINGLE	NO	120 MHz	1 W	1 A	1	Other Transistors	80	140 Cel	Tin/Lead (Sn/Pb)	e0
2SA893E	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.3 W	.05 A	1	Other Transistors	800	125 Cel
2SB605	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	90	150 Cel	Tin/Lead (Sn/Pb)	e0
2SA893AD	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.3 W	.05 A	1	Other Transistors	500	125 Cel
2SB605M	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	90	150 Cel
2SB605-AZ	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	90	150 Cel			10	260
2SB605L	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	135	150 Cel
2SB605K	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	200	150 Cel
2SA1154-A	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	200	150 Cel			10	260
2SA1154	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A	1	Other Transistors	200	150 Cel	TIN LEAD	e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.