125 MHz Other Function Transistors 38

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

MPSA13

Texas Instruments

NPN

DARLINGTON

NO

125 MHz

.5 A

Other Transistors

10000

150 Cel

MPS-A13

General Electric Solid State

NPN

DARLINGTON

NO

125 MHz

.5 A

Other Transistors

10000

150 Cel

MPSA14

Texas Instruments

NPN

DARLINGTON

NO

125 MHz

.5 A

Other Transistors

20000

150 Cel

MPSA13RA

National Semiconductor

NPN

DARLINGTON

NO

125 MHz

.5 A

Other Transistors

10000

150 Cel

Tin/Lead (Sn/Pb)

e0

MPS-A63

General Electric Solid State

PNP

DARLINGTON

NO

125 MHz

.5 A

Other Transistors

5000

150 Cel

Tin/Lead (Sn/Pb)

e0

BC349

Tt Electronics Plc

NPN

SINGLE

NO

125 MHz

.3 W

.1 A

1

Other Transistors

450

135 Cel

Tin/Lead (Sn/Pb)

e0

BCY65

Texas Instruments

NPN

SINGLE

NO

125 MHz

.345 W

.1 A

1

Other Transistors

175 Cel

BCY58X

Texas Instruments

NPN

SINGLE

NO

125 MHz

.6 W

.2 A

1

Other Transistors

175 Cel

BCY58

Texas Instruments

NPN

SINGLE

NO

125 MHz

.6 W

.2 A

1

Other Transistors

175 Cel

MPSA20

Texas Instruments

NPN

SINGLE

NO

125 MHz

.625 W

.1 A

1

Other Transistors

40

150 Cel

MPSA70

Texas Instruments

PNP

SINGLE

NO

125 MHz

.625 W

.1 A

1

Other Transistors

40

150 Cel

BCY58VIII

STMicroelectronics

NPN

SINGLE

NO

125 MHz

.6 W

.2 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BCY59VII

STMicroelectronics

NPN

SINGLE

NO

125 MHz

.6 W

.2 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BCY58IX

STMicroelectronics

NPN

SINGLE

NO

125 MHz

.6 W

.2 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BCY58VII

STMicroelectronics

NPN

SINGLE

NO

125 MHz

.6 W

.2 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BCW60R

STMicroelectronics

NPN

SINGLE

YES

125 MHz

.15 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW60

STMicroelectronics

NPN

SINGLE

YES

125 MHz

.3 W

.1 A

1

Other Transistors

120

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX70

STMicroelectronics

NPN

SINGLE

YES

125 MHz

.62 W

.8 A

1

Other Transistors

120

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX70R

STMicroelectronics

NPN

SINGLE

YES

125 MHz

.15 W

.2 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCY65E

Infineon Technologies

PNP

SINGLE

NO

125 MHz

1 W

.1 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

MMBTA14-E6433

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

10000

150 Cel

SMBTA20

Infineon Technologies

NPN

SINGLE

YES

125 MHz

.33 W

.1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCX53-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

MMBTA13-E6327

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

5000

150 Cel

SMBTA14-E6433

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

10000

150 Cel

BCX52-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

SMBTA70

Infineon Technologies

PNP

SINGLE

YES

125 MHz

.33 W

.2 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

SMBTA64-E6433

Infineon Technologies

PNP

SINGLE

YES

125 MHz

.33 W

.5 A

1

Other Transistors

10000

150 Cel

MMBTA13-E6433

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

5000

150 Cel

BCX51-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

MMBTA14-E6327

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

10000

150 Cel

MMSTA13

Diodes Incorporated

NPN

DARLINGTON

YES

125 MHz

.2 W

.3 A

Other Transistors

10000

150 Cel

Tin/Lead (Sn/Pb)

e0

MMSTA64

Diodes Incorporated

PNP

DARLINGTON

YES

125 MHz

.2 W

.5 A

Other Transistors

10000

150 Cel

Tin/Lead (Sn/Pb)

e0

MMSTA63

Diodes Incorporated

PNP

DARLINGTON

YES

125 MHz

.2 W

.5 A

Other Transistors

5000

150 Cel

Tin/Lead (Sn/Pb)

e0

MMSTA14

Diodes Incorporated

NPN

DARLINGTON

YES

125 MHz

.2 W

.3 A

Other Transistors

20000

150 Cel

Tin/Lead (Sn/Pb)

e0

KST70

Samsung

PNP

SINGLE

YES

125 MHz

.1 A

1

Other Transistors

40

Tin/Lead (Sn/Pb)

e0

MMBTA70

Samsung

PNP

SINGLE

YES

125 MHz

.225 W

.1 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBTA20

Samsung

NPN

SINGLE

YES

125 MHz

.225 W

.1 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.