3 MHz Other Function Transistors 181

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BD242C

Texas Instruments

PNP

SINGLE

NO

3 MHz

40 W

5 A

1

Other Transistors

25

150 Cel

BD240

Texas Instruments

PNP

SINGLE

NO

3 MHz

30 W

3 A

1

Other Transistors

40

150 Cel

BD249B

Texas Instruments

NPN

SINGLE

NO

3 MHz

3 W

25 A

1

Other Transistors

10

140 Cel

BD245A

Texas Instruments

NPN

SINGLE

NO

3 MHz

3 W

10 A

1

Other Transistors

25

140 Cel

BD249

Texas Instruments

NPN

SINGLE

NO

3 MHz

3 W

25 A

1

Other Transistors

20

140 Cel

BD538

Onsemi

PNP

SINGLE

NO

3 MHz

50 W

4 A

1

Other Transistors

15

140 Cel

TIN LEAD

e0

235

BD611

Infineon Technologies

NPN

SINGLE

NO

3 MHz

15 W

4 A

1

Other Transistors

85

140 Cel

Tin/Lead (Sn/Pb)

e0

BD615

Infineon Technologies

NPN

SINGLE

NO

3 MHz

15 W

4 A

1

Other Transistors

85

140 Cel

Tin/Lead (Sn/Pb)

e0

BD613

Infineon Technologies

NPN

SINGLE

NO

3 MHz

15 W

4 A

1

Other Transistors

85

140 Cel

Tin/Lead (Sn/Pb)

e0

BD617

Infineon Technologies

NPN

SINGLE

NO

3 MHz

15 W

4 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BD619

Infineon Technologies

NPN

SINGLE

NO

3 MHz

15 W

4 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

2SB435

Toshiba

PNP

SINGLE

NO

3 MHz

1.5 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD877

Toshiba

NPN

SINGLE

NO

3 MHz

25 W

3 A

1

Other Transistors

60

175 Cel

Tin/Lead (Sn/Pb)

e0

2SB435G

Toshiba

PNP

SINGLE

NO

3 MHz

1.5 W

3 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

2SD1354

Toshiba

NPN

SINGLE

NO

3 MHz

30 W

3 A

1

Other Transistors

60

140 Cel

Tin/Lead (Sn/Pb)

e0

2SB434G

Toshiba

PNP

SINGLE

NO

3 MHz

1.5 W

3 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

2SB434

Toshiba

PNP

SINGLE

NO

3 MHz

25 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

KSD5000

Samsung

NPN

SINGLE

NO

3 MHz

80 W

2.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5016

Samsung

NPN

SINGLE

NO

3 MHz

60 W

5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

MJD30C

Samsung

PNP

SINGLE

YES

3 MHz

15 W

1 A

1

Other Transistors

15

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5002

Samsung

NPN

SINGLE

NO

3 MHz

120 W

5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5013

Samsung

NPN

SINGLE

NO

3 MHz

60 W

6 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5012

Samsung

NPN

SINGLE

NO

3 MHz

60 W

5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5007

Samsung

NPN

SINGLE

NO

3 MHz

120 W

6 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5011

Samsung

NPN

SINGLE

NO

3 MHz

50 W

3.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5015

Samsung

NPN

SINGLE

NO

3 MHz

50 W

3.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5005

Samsung

NPN

SINGLE

NO

3 MHz

80 W

3.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5004

Samsung

NPN

SINGLE

NO

3 MHz

80 W

2.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

MJD30

Samsung

PNP

SINGLE

YES

3 MHz

15 W

1 A

1

Other Transistors

15

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5014

Samsung

NPN

SINGLE

NO

3 MHz

50 W

2.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5003

Samsung

NPN

SINGLE

NO

3 MHz

120 W

6 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

MJD29

Samsung

NPN

SINGLE

YES

3 MHz

15 W

1 A

1

Other Transistors

15

140 Cel

Tin/Lead (Sn/Pb)

e0

KSD5006

Samsung

NPN

SINGLE

NO

3 MHz

120 W

5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

MJD29C

Samsung

NPN

SINGLE

YES

3 MHz

15 W

1 A

1

Other Transistors

15

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5001

Samsung

NPN

SINGLE

NO

3 MHz

80 W

3.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5017

Samsung

NPN

SINGLE

NO

3 MHz

60 W

6 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

KSD5010

Samsung

NPN

SINGLE

NO

3 MHz

50 W

2.5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.