300 MHz Other Function Transistors 128

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

IMBT3904

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.31 W

.1 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

MMST4124

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

60

150 Cel

Tin/Lead (Sn/Pb)

e0

MMDT3904S

Diodes Incorporated

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

30

150 Cel

2SC4203(SM)

Toshiba

NPN

SINGLE

YES

300 MHz

10 W

.3 A

1

Other Transistors

20

150 Cel

Tin/Lead (Sn/Pb)

e0

2N3904(TE2,T)

Toshiba

NPN

SINGLE

NO

300 MHz

.35 W

.2 A

1

Other Transistors

100

150 Cel

Tin/Lead (Sn/Pb)

e0

TBC549

Toshiba

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

S1806

Toshiba

PNP

SINGLE

NO

300 MHz

.625 W

.5 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

YTS2222A

Toshiba

NPN

SINGLE

YES

300 MHz

.625 W

.6 A

1

Other Transistors

100

150 Cel

TBC550

Toshiba

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC383ATM

Toshiba

NPN

SINGLE

NO

300 MHz

.3 W

.05 A

1

Other Transistors

20

125 Cel

2SC2234

Toshiba

NPN

SINGLE

NO

300 MHz

70 W

10 A

1

Other Transistors

10

175 Cel

2SC2217

Toshiba

NPN

SINGLE

NO

300 MHz

.3 W

.05 A

1

Other Transistors

40

2SC4203

Toshiba

NPN

SINGLE

NO

300 MHz

1 W

.3 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC3736-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SC3734B22-L

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734-L

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734-T2B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734-T1B-A

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

TIN BISMUTH

e6

2SC3736-T1

Renesas Electronics

NPN

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SC3734B23-T2B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

100

150 Cel

2SC3734B23-T1B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

100

150 Cel

2SC3734-T1B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734B24-T1B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

150

150 Cel

2SC3734B22-T1B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734B23-L

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

100

150 Cel

2SC3734-T2B-A

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

TIN BISMUTH

e6

2SC3734B24-L

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

150

150 Cel

2SC3734B22-T2B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734-T2B

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3736-T2

Renesas Electronics

NPN

SINGLE

YES

300 MHz

2 W

1 A

1

Other Transistors

60

150 Cel

2SC3734-T1B

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

75

150 Cel

2SC3734B24-T2B-AT

Renesas Electronics

NPN

SINGLE

YES

300 MHz

.2 W

.2 A

1

Other Transistors

150

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.