4000 MHz Other Function Transistors 40

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BFG235-E6433

Infineon Technologies

NPN

SINGLE

YES

4000 MHz

2 W

.3 A

1

Other Transistors

75

150 Cel

BFQ19S-E6433

Infineon Technologies

NPN

SINGLE

YES

4000 MHz

1 W

.075 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

BFG19S-E6433

Infineon Technologies

NPN

SINGLE

YES

4000 MHz

1 W

.21 A

1

Other Transistors

70

150 Cel

2SC2548

Toshiba

NPN

SINGLE

NO

4000 MHz

.25 W

.03 A

1

Other Transistors

30

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC5108(TE85L,F)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.03 A

1

Other Transistors

80

125 Cel

2SC3547

Toshiba

NPN

SINGLE

YES

4000 MHz

.15 W

.03 A

1

Other Transistors

30

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC5107Y(TE85L,F)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.03 A

1

Other Transistors

120

125 Cel

2SC5111FT(TE85L)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.06 A

1

Other Transistors

80

125 Cel

2SC5108FT-Y(TE85L,F)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.03 A

1

Other Transistors

120

125 Cel

2SC2499

Toshiba

NPN

SINGLE

NO

4000 MHz

.3 W

.03 A

1

Other Transistors

30

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC5108FT(TE85L)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.03 A

1

Other Transistors

80

125 Cel

2SC3548

Toshiba

NPN

SINGLE

YES

4000 MHz

.2 W

.03 A

1

Other Transistors

30

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC5108FT-O(TE85L,F)

Toshiba

NPN

SINGLE

YES

4000 MHz

.1 W

.03 A

1

Other Transistors

80

125 Cel

HN3C13FU(TE85L)

Toshiba

NPN

YES

4000 MHz

.03 A

Other Transistors

80

125 Cel

HTT1115S

Renesas Electronics

NPN

YES

4000 MHz

.22 W

.05 A

Other Transistors

80

150 Cel

2SC5651

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.1 A

1

Other Transistors

80

150 Cel

2SC5194F-T2

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.15 W

.1 A

1

Other Transistors

80

150 Cel

2SC5675

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.2 W

.1 A

1

Other Transistors

100

150 Cel

UPA809T

Renesas Electronics

NPN

YES

4000 MHz

.1 A

Other Transistors

80

150 Cel

2SC5437FB

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.125 W

.1 A

1

Other Transistors

100

150 Cel

UPA846TC

Renesas Electronics

NPN

YES

4000 MHz

.035 A

Other Transistors

100

150 Cel

2SC5437

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.125 W

.1 A

1

Other Transistors

80

150 Cel

NE97833-T1

Renesas Electronics

PNP

SINGLE

YES

4000 MHz

.05 A

1

Other Transistors

20

200 Cel

UPA829TD-T3

Renesas Electronics

NPN

YES

4000 MHz

.1 A

Other Transistors

80

150 Cel

UPA846TD

Renesas Electronics

NPN

YES

4000 MHz

.035 A

Other Transistors

100

150 Cel

UPA848TD

Renesas Electronics

NPN

YES

4000 MHz

.21 W

.035 A

Other Transistors

50

150 Cel

UPA836TD

Renesas Electronics

NPN

YES

4000 MHz

.1 A

Other Transistors

80

150 Cel

UPA814TC

Renesas Electronics

NPN

YES

4000 MHz

.23 W

.1 A

Other Transistors

80

150 Cel

2SC5616

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.14 W

.1 A

1

Other Transistors

80

150 Cel

UPA846TD-T3

Renesas Electronics

NPN

YES

4000 MHz

.035 A

Other Transistors

100

150 Cel

2SC5437EB

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.125 W

.1 A

1

Other Transistors

80

150 Cel

UPA872TD

Renesas Electronics

NPN

YES

4000 MHz

.21 W

.1 A

Other Transistors

100

150 Cel

2SC5675-T1

Renesas Electronics

NPN

SINGLE

YES

4000 MHz

.2 W

.1 A

1

Other Transistors

100

150 Cel

UPA846TC-T1

Renesas Electronics

NPN

YES

4000 MHz

.035 A

Other Transistors

100

150 Cel

UPA836TF-T1

Renesas Electronics

NPN

YES

4000 MHz

.2 W

.03 A

Other Transistors

75

150 Cel

UPA836TF

Renesas Electronics

NPN

YES

4000 MHz

.2 W

.03 A

Other Transistors

75

150 Cel

UPA836TD-T3

Renesas Electronics

NPN

YES

4000 MHz

.1 A

Other Transistors

80

150 Cel

UPA872TD-T3

Renesas Electronics

NPN

YES

4000 MHz

.21 W

.1 A

Other Transistors

100

150 Cel

UPA829TD

Renesas Electronics

NPN

YES

4000 MHz

.1 A

Other Transistors

80

150 Cel

UPA854TD-A

Renesas Electronics

NPN

YES

4000 MHz

.21 W

.1 A

Other Transistors

75

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.